Bel Fuse Inc expands its line of EOS power supplies with the introduction of the EPG300 and EPG500 series of AC-DC power supplies based on new, efficient Gallium Nitride (GaN) technology design. Bel has positioned itself at the forefront of assessing power supplies utilizing GaN technology, offering a promising route towards achieving higher power density […]
RF Power
High-side switches add less than 260 mΩ
STMicroelectronics has launched a family of octal high-side switches that combine galvanic isolation for robustness, RDS(on) below 260mΩ for energy efficiency and protection, and diagnostics for reliability and fault recovery. The 8-channel switches, ISO808, ISO808A, ISO808-1, and ISO808A-1, drive all types of industrial loads – capacitive, resistive, and inductive – with one side connected to the ground. Typical uses […]
Next-gen mmWave platform targets mmWave front ends
WIN Semiconductors Corp announces the commercial release of its next-generation integrated mmWave GaAs platform, PQG3-0C. Targeting mmWave front ends, the PQG3-0C technology combines individually optimized E-mode low noise and D-mode power pHEMTs to enable best-in-class PA and LNA performance on the same chip. The E-mode/D-mode pHEMTs have ƒt of 110GHz and 90GHz respectively, and both […]
Cellular-based remote RF wireless charging platform eliminates IoT batteries
Powercast Corporation has created a unique cellular-based RF Power-Over-Distance Wireless Charging Platform, built around Sequans Monarch cellular IoT connectivity technology. Powercast will demonstrate the solution at Mobile World Congress in Las Vegas, September 28 – 30, booth w2.1226. Operating in the lower 600 – 900 MHz frequency bands licensed by mobile carriers, the Powercast cellular-based RF Wireless […]
ESD protection devices ensure signal integrity for USB4
Nexperia announced two PESD5V0R1BxSF extremely low clamping and capacitance bidirectional Electrostatic Discharge (ESD) protection diodes. Based on Nexperia’s TrEOS technology with active silicon-controlled rectification, the devices ensure optimal signal integrity for USB4 (up to 2 x 20 Gbps) data lines on laptops and peripherals, smartphones, and other portable electronic equipment. The PESD5V0R1BDSF is optimized for low clamping […]
RF amplifiers optimized for harsh operational conditions
Ampleon has announced a further expansion to its portfolio of next-generation amplifier ICs. These devices are based on the company’s Advanced Rugged Technology (ART). Thanks to the heavy-duty design employed, they are capable of dealing with the harshest of operational conditions. With 1400W and 1600W ratings, the devices in the new ART1K6x series operate over […]
LDMOS power transistors optimized for RF power amplifiers
STMicroelectronics is adding a broad range of new devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimized for RF power amplifiers (PAs) in a variety of commercial and industrial applications. Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a […]
GaN power amplifiers deliver high RF output, ensure signals retain characteristics
Satellite communication systems use complex modulation schemes to achieve the blazingly fast data rates required to deliver video and broadband data. To attain this, they must deliver high RF output power while simultaneously ensuring the signals retain their desired characteristics. The new GMICP2731-10 GaN MMIC power amplifier announced by Microchip Technology Inc. helps meet both of these requirements. […]
30 V, N-channel MOSFET offers RDS(ON) down to 0.95 mΩ
Vishay Intertechnology, Inc. introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 mΩ at 10 […]
Isolated gate drivers handle SiC FETs
Silicon Labs announced the addition of Si828x version 2 to its isolated gate driver product family. This update allows the product family to effectively drive Silicon Carbide (SiC) Field Effect Transistor (FET) gates, addressing the growing market for half-and full-bridge inverters and power supplies that require improved power density, cooler operation, and reduced switching losses. […]
