Powercast Corporation has created a unique cellular-based RF Power-Over-Distance Wireless Charging Platform, built around Sequans Monarch cellular IoT connectivity technology. Powercast will demonstrate the solution at Mobile World Congress in Las Vegas, September 28 – 30, booth w2.1226. Operating in the lower 600 – 900 MHz frequency bands licensed by mobile carriers, the Powercast cellular-based RF Wireless […]
RF Power
ESD protection devices ensure signal integrity for USB4
Nexperia announced two PESD5V0R1BxSF extremely low clamping and capacitance bidirectional Electrostatic Discharge (ESD) protection diodes. Based on Nexperia’s TrEOS technology with active silicon-controlled rectification, the devices ensure optimal signal integrity for USB4 (up to 2 x 20 Gbps) data lines on laptops and peripherals, smartphones, and other portable electronic equipment. The PESD5V0R1BDSF is optimized for low clamping […]
RF amplifiers optimized for harsh operational conditions
Ampleon has announced a further expansion to its portfolio of next-generation amplifier ICs. These devices are based on the company’s Advanced Rugged Technology (ART). Thanks to the heavy-duty design employed, they are capable of dealing with the harshest of operational conditions. With 1400W and 1600W ratings, the devices in the new ART1K6x series operate over […]
LDMOS power transistors optimized for RF power amplifiers
STMicroelectronics is adding a broad range of new devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimized for RF power amplifiers (PAs) in a variety of commercial and industrial applications. Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a […]
GaN power amplifiers deliver high RF output, ensure signals retain characteristics
Satellite communication systems use complex modulation schemes to achieve the blazingly fast data rates required to deliver video and broadband data. To attain this, they must deliver high RF output power while simultaneously ensuring the signals retain their desired characteristics. The new GMICP2731-10 GaN MMIC power amplifier announced by Microchip Technology Inc. helps meet both of these requirements. […]
30 V, N-channel MOSFET offers RDS(ON) down to 0.95 mΩ
Vishay Intertechnology, Inc. introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 mΩ at 10 […]
Isolated gate drivers handle SiC FETs
Silicon Labs announced the addition of Si828x version 2 to its isolated gate driver product family. This update allows the product family to effectively drive Silicon Carbide (SiC) Field Effect Transistor (FET) gates, addressing the growing market for half-and full-bridge inverters and power supplies that require improved power density, cooler operation, and reduced switching losses. […]
Digital dc-dc converter delivers 1300 W in half-brick package for RF power amplifier applications
Flex Power Modules announces the BMR685, the first digital DC/DC converter for Radio Frequency (RF) Power Amplifiers in the half-brick form factor that can provide a continuous output power of up to 1300 W. With telecoms infrastructure shifting to 5G, the RFPA is becoming increasingly power-hungry, and RF Power Amplifier designers are moving from LDMOS […]
High-frequency 100-nF capacitors improve bypass performance in GaN/GaAs amplifiers
Knowles Precision Devices recently announced the release of a new 100nF capacitor within its V-Series of single-layer capacitors. The 100nF is a high frequency, wire bondable single layer capacitor, making it ideally suited for GaN and GaAs amplifier applications where small size and microwave performance are critical. V-Series single-layer capacitors, including the new 100nF, are […]
ESD-suppression devices protect high-speed data lines
Nexperia announced three new TrEOS protection devices that provide the most compact method to suppress ESD in USB3.2, HDMI2.1, and other high-speed data lines. The new PUSB3BB2DF, PESD5V0C2BDF, PESD4V0Z2BCDF devices provide best-in-class ESD protection and system robustness by combining high RF performance with very low clamping and very high surge capability. The new parts […]
