Efficient Power Conversion (EPC) has entered a licensing agreement with Renesas Electronics for EPC’s low-voltage enhancement-mode gallium nitride (eGaN) technology. Renesas will establish internal wafer fabrication for these devices and second-source select EPC GaN products currently in mass production. The agreement addresses supply-chain concerns by creating an additional qualified manufacturer for existing EPC devices. Over […]
AI
Ultralow ESL and ESR support high-speed PDN requirements
The EC2005P, EC2025P and EC2006P ECAPs™ from Empower Semiconductor are embedded silicon capacitors designed to support power integrity requirements in AI and high-performance computing processors. The devices provide capacitance values of 9.34 µF in a 2 mm x 2 mm package, 18.68 µF in a 4 mm x 2 mm package and 36.8 µF in […]
Stackable power modules deliver up to 200 A vertical power
The FS1525 µPOL from TDK Corporation is a low-profile non-isolated DC-DC point-of-load power module delivering up to 25 A in a 7.65 x 6.80 mm footprint and just 3.82 mm height, designed for vertical power delivery directly beneath FPGA, SoC or ASIC devices. Based on 3D chip-embedded packaging, it integrates controller, MOSFETs, inductor and passives, […]
Vertical power delivery reduces losses in AI processor designs
GPUs, ASICs, and other AI processors require enormous amounts of power delivered at low voltages and high currents. Moving point-of-load DC-DC converters underneath those processors wastes less energy and provides cleaner power than having power components placed alongside loads. The semiconductor industry is approaching a transformative inflection point driven by the explosive growth of artificial […]
150 A quad-channel IVR targets AI accelerator power rails
Endura Technologies has introduced the ET21324X, a quad-channel integrated voltage regulator intended for high-current point-of-load conversion in AI and high-performance compute platforms. The device is specified to deliver 150 A continuous output current with 220 A instantaneous capability and targets power rails that must hold regulation under rapid load steps from processors and accelerators. The […]
MOSFET powers 48 V hot swap in AI servers
Alpha and Omega Semiconductor Limited announced its AOLV66935, a 100V High Safe Operating Area (SOA) MOSFET in an LFPAK 8×8 package. AOS’s latest MOSFET is designed as an ideal solution for 48V Hot Swap architectures in AI servers. The power demands of AI servers are intensifying, primarily driven by the increasing performance of the GPU/TPU. […]
Dual-voltage Flash offers faster program and erase performance
GigaDevice has introduced the GD25NX family of dual-voltage xSPI NOR Flash devices, designed with a 1.8 V core and 1.2 V I/O interface. The series connects directly to 1.2 V system-on-chip designs without requiring an external booster, reducing overall power consumption and component count. The GD25NX line builds on earlier 1.2 V I/O products and […]
TOLL-package MOSFETs support compact, high-power electronics
Magnachip Semiconductor Corporation has released two 650V Super Junction MOSFETs in a TO-Leadless (TOLL) package configuration. The devices are designed for high-power and high-current applications, including consumer electronics such as televisions, gaming monitors, and power adaptors. The new MOSFETs use a 4-pin Kelvin source configuration, which helps minimize parasitic inductance in the gate-source return path. […]
GaN-on-GaN design supports compact, efficient power conversion
Onsemi conductor has introduced a new generation of vertical gallium nitride (vGaN) devices featuring GaN-on-GaN architecture and designed to enhance power density, efficiency, and reliability in high-performance applications. Unlike lateral GaN structures built on silicon or sapphire substrates, the vertical configuration conducts current through the semiconductor material itself, enabling operation at higher voltages and switching […]
Modular GaN reference design scales to 108 kW configurations
Efficient Power Conversion Corporation has released a 5 kW AC-to-48 V DC reference design using enhancement-mode gallium nitride power devices. The system achieves 96.5% efficiency and 116 W/in³ power density while meeting Open Rack V3 size specifications. The design consists of two stages. The EPC91107KIT front-end stage converts 240 VAC to 400 VDC using a […]
