IXYS Corporation announced a 30A, dual channel, 4000V isolated gate driver module, the IXIDM1403_1505_M.
Built with the IX6610/11 gate driver chipset, it allows a 3.3V microcontroller (MCU), through a 4kV isolation barrier, to control IGBTs and MOSFETs in the half-bridge configuration. The PWM signals can be as short as 500 ns, and there is no lower limit on the switching frequency. It is capable of driving high-power IGBT and MOSFET modules rated up to 1700V.
The IXIDM1403_1505_M gate driver core can support switching frequencies up to 250kHz. The two output channels are electrically isolated from each other and from the primary side. An internal power supply can provide up to 2W per channel of isolated power to drive both upper and lower IGBTs (or MOSFETs), effectively isolating the MCU from the high power circuitry. Operating from a single polarity 15V power source, it provides +15V/-5V and 30A peak current to the IGBT/MOSFET gates as well as +3.3V (at 50mA) to the corresponding controlling MCU.
This driver module provides a complete high voltage, gate driver solution with all the necessary features: short circuit protection, under and over-voltage lockout protection, advanced active clamping, and supply voltage monitoring. Enclosed in a 50mm x 48mm x 22mm package, it enables a compact and low-profile design.
The IXIDM1403_1505_M gate driver module is well suited for digital power applications where a Zilog microcontroller can be used to implement the digital control. Such power conversion applications include high power inverters, isolated DC-DC converters, motor drives, uninterruptible power supplies (UPS), renewable energy, traction, and medical devices.
Additional product information can be obtained by visiting the IXYS website at or by contacting the company directly.
Leave a Reply