Toshiba America Electronic Components, Inc.(TAEC)* today announced a new lineup of ultra-efficient, high-speed, high-voltage MOSFETs for switching voltage regulator designs. Available with 800V and 900V ratings, the four N-channel devices (TK4A80E, TK5A80E, TK3A90E, TK5A90E) are targeted to applications including flyback converters in LED lighting, supplementary power supplies and other circuits that require current switching below 5.0A.
The new enhancement mode MOSFETs are based on Toshiba’s π-MOS VIII (Pi-MOS-8), the company’s eighth generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. This technology supports reduced gate charge and capacitance compared to prior generations, without losing the benefits of low RDS(ON).
These MOSFETs represent low-current supplements to Toshiba’s existing DTMOS IV line-up of 800V superjunction DTMOS IV devices. The 2.5A TK3A90E and 4.5A TK5A90E feature VDSS ratings of 900V and have typical RDS(ON) ratings of 3.7Ω and 2.5Ω, respectively. Both the 4.0A TK4A80E and 5.0A TK5A80E devices offer VDSS ratings of 800V with typical RDS(ON) ratings of 2.8Ω and 1.9Ω, respectively.
Toshiba’s new high-voltage MOSFETs offer an ultra-low maximum leakage current of only 10μA (VDS = 640V for the 800V device; VDS = 720V for the 900V device) and a gate threshold voltage range of 2.5V to 4.0V. All of the devices are supplied in a standard TO-220SIS form factor.
- Low drain-source on-resistance
- Low leakage current
- Enhancement mode
|TK4A80E||800V||4.0A||3.5 Ω||15 nC|
|TK5A80E||800V||5.0A||2.4 Ω||20 nC|
|TK3A90E||900V||2.5A||4.6 Ω||15 nC|
|TK5A90E||900V||4.5A||3.1 Ω||20 nC|