Central Semiconductor announces the introduction of several new 650V super junction N-Channel MOSFETs designed for high-voltage, fast-switching applications. The latest additions, available in TO-220FP packaging, include: 7-650 (4.7A) 3-650 (7.3A) CDMSJ22010-650 (10A) 8-650 (13.8A) CDMSJ22029-650 (29A) The Super Junction MOSFETs feature a unique die structure, which supports high voltage with comparatively low on-resistance and fast […]
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1200V rectifiers address critical design parameters of high-frequency systems
Central Semiconductor introduces the CSICD05-1200 (5A, 1200V) and CSICD10-1200 (10A, 1200V) Silicon Carbide Schottky rectifiers, featuring the true 2-lead DPAK-2L (TO-252-2L) package. Both devices are ideal for high-frequency systems where energy efficiency, low switching losses, and thermal performance are critical design parameters. Silicon Carbide provides a stable solution for a wide range of temperatures and […]
