High-power GaN and SiC in the spotlight
Wide-bandgap semiconductors were one of the highlights at this year’s PCIM. In that regard, Infineon Technologies AG said it is starting volume production for the EASY 1B, a full-SiC module. The new 1.2 kV SiC MOSFETs show dynamic losses which are an order of magnitude lower than 1.2 kV silicon IGBTs. First products will initially support applications such as photovoltaic inverters, uninterruptible power supplies and charging/storage systems.
NEXT PAGE: SiC MOSFETs go in low-inductance packages
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