Power semiconductors on display
Semiconductor supplier Rohm displayed a variety of power devices including a new series of isolated gate driver ICs for power MOSFETs carrying 3.75 kV-isolated device specifically designed to drive a SiC power MOSFET. Also there were new 1,200-V, 400-A and 600-A full SiC power modules billed as good candidates for replacing up to 1 kA Si IGBT-based power modules, depending on the switching frequency. And a new 650-V IGBT line-up is said to overcome the trade-off between saturation voltage and turn-off losses.
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