ROHM Semiconductor announces the adoption of its 650V GaN device (EcoGaN™) in the C4 Duo, a 45W output USB-C charger from Innergie, a brand of Delta. ROHM’s EcoGaN device contributes to greater application performance, reliability, and miniaturization by providing higher efficiency in power supply systems.

Efforts to save energy are accelerating toward achieving a decarbonized society by reducing power loss, especially in equipment that handles high power. Furthermore, GaN devices that enable high-speed switching are being considered for power supplies since high-frequency operation not only saves energy but also allows the use of smaller circuits.

Offering GaN-based devices under the brand name EcoGaN, ROHM is advancing product development and providing solutions by focusing on mastering the use of GaN, which has high potential but is difficult to handle. For discrete products, mass production of 150V withstand GaN HEMTs began in 2022 and 650V withstand GaN HEMTs in 2023 featuring industry-leading device performance (R_DS(ON) × C_iss / R_DS(ON) × C_oss). In addition, integrating an ESD protection element into the GNP1150TCA-Z improves ESD breakdown tolerance by approximately 75% over standard GaN HEMTs, and has been evaluated to improve application reliability that ultimately led its adoption.