ROHM has recently announced the availability of 3^rd generation SiC Schottky Barrier Diodes (SBDs) optimized for power supply PFC circuits in servers and high-performance PCs.

The SCS3 series adopts a new structure that improves upon the industry-low VF characteristics of ROHM’s 2^nd Generation SiC SBDs (1.35V @ 25C) while providing increased surge resistance. This contributes to greater application efficiency, enabling support for power supply PFC circuits in servers, high-performance PCs, and the like.

In recent years, power components that provide higher efficiencies are being required in order to improve power conversion efficiency and energy savings in the power electronics market, which includes industrial power supplies, solar power systems, electric vehicles, and home appliances. Compared to conventional silicon products, SiC devices feature superior material characteristics, making them the preferred choice in power applications. In particular, in equipment such as servers where maximum power supply efficiency is demanded, the high-speed recovery characteristics of SiC SBDs have proven effective in increasing device efficiency when used in PFC circuits. Surge current resistance is also an important consideration in high power applications.

ROHM’s 1^st and 2^nd generation SiC SBDs continue to be well-received and regarded in the industry, but to expand applicability a new device structure was adopted that allowed ROHM to improve the industry-leading Vf characteristics of its 1^st and 2^nd generation products while also significantly increase surge resistance.