Navitas has introduced a new 5th-generation silicon carbide MOSFET technology platform for 1200 V power conversion designs. The trench-assisted planar structure is designed to improve switching and conduction performance compared to the prior 1200 V generation. Applications include AI data centers, grid and energy infrastructure, and industrial electrification. Reported performance changes include a 35% improvement […]
Semiconductor
Renesas expands GaN portfolio to cover 1 V to 650 V+ range with EPC technology license
Efficient Power Conversion (EPC) has entered a licensing agreement with Renesas Electronics for EPC’s low-voltage enhancement-mode gallium nitride (eGaN) technology. Renesas will establish internal wafer fabrication for these devices and second-source select EPC GaN products currently in mass production. The agreement addresses supply-chain concerns by creating an additional qualified manufacturer for existing EPC devices. Over […]
Isolated gate driver ICs with opto-emulator input support SiC
The EiceDRIVER™ 1ED301xMC12I family from Infineon Technologies AG consists of isolated gate driver ICs with opto-emulator input designed for Si MOSFETs, IGBTs and SiC MOSFETs in motor drives, solar inverters, EV chargers and energy storage systems. The devices provide up to 6.5 A output current, CMTI greater than 300 kV/µs, 40 ns propagation delay and […]
Space-grade LVDS driver supports data rates up to 600 Mbps
The RHFLVDS41 low-voltage differential signaling driver from STMicroelectronics is a QML-V qualified device designed for high-speed space data links with data rates up to 600 Mbps. The driver operates over a 2.3 V to 3.6 V supply range, supports compatibility with modern low-voltage logic standards and provides radiation tolerance up to 300 krad(Si) TID with […]
Ultraviolet laser diode delivers 1.0 W output at 379 nm
Nuvoton Technology has started mass production of the KLC330FL01WW, a 379 nm ultraviolet semiconductor laser delivering 1.0 W optical output in a TO-9 CAN package. The device combines a short UV wavelength with improved heat dissipation and extended operating lifetime, addressing the requirements of maskless lithography and other precision optical systems used in advanced semiconductor […]
Reed relays: from voiceband calls to GHz ATE, now facing MEMS disruption part 1
Reed relays have evolved from their audio roots to handle GHz signals; MEMS technology may push them aside. Electromechanical relays are like dinosaurs that haven’t gotten the news that they are supposed to be extinct. Instead, they beget new generations, get designed into new applications, and even take over new territory. Countless millions of these […]
GaN laser driver enables pulse widths as narrow as 5 ns with 10+ amp peak currents
Efficient Power Conversion has expanded its product lineup with the introduction of the EPC91116, a laser driver evaluation board designed for indirect time-of-flight applications in automotive and industrial sensing environments. The board is built around the automotive-qualified EPC2203 gallium nitride power transistor, enabling nanosecond-scale performance with a straightforward architecture. The EPC91116 addresses growing demand for […]
Are SiC and GaN going to be replaced by ultra power semis?
With the recent announcement by Infineon that gallium nitride (GaN) use is reaching the “tipping point” for accelerated adoption, maybe it’s time to consider what’s next beyond wide bandgap (WBG) GaN and silicon carbide (SiC) devices. Next-generation ultra-wide bandgap (UWBG) power semiconductors are being developed that may replace current WBG options. UWBG semiconductors have bandgap […]
Fast-response fuses target data center and EV applications
Littelfuse has introduced the QS series of high-speed semiconductor fuses designed for protecting power semiconductor devices. The cylindrical 10 mm x 38 mm fuses feature higher current ratings and rapid response times to limit fault currents. These fast-acting fuses offer short-circuit protection while reducing heat energy transfer to protected devices. The QS series handles repeated on/off switching […]
Wide bandgap power devices from industrial motors to 8.5 kW data center systems
Navitas Seminconductor is demonstrating new gallium nitride (GaN) and silicon carbide (SiC) power semiconductor technologies at electronica 2024, focusing on applications in AI data centers, electric vehicles, renewable energy, and industrial systems. A new 8.5 kW power supply for AI and hyperscale data centers combines GaN power ICs with third-generation SiC MOSFETs. The SiC components, […]
