STMicroelectronics has released high-power modules for electric vehicles that boost performance and driving range. ST’s new silicon-carbide (SiC) power modules have been selected for Hyundai’s E-GMP electric vehicle platform shared by KIA EV6 and several models. Five new SiC-MOSFET based power modules provide flexible choices for vehicle makers, covering a selection of power ratings and support for […]
Semiconductor
AEC-Q100-qualified IC load switches feature low-leakage currents
Two new Automotive grade AEC-Q100 I Q Smart load switch ICs, the AEC-Q100-qualified GLF1111Q and GLF1200Q, are rated for a wide temperature range (Grade 1 -40 to +125°C). The GLF1111Q provides industry-leading, battery-saving leakage current (2nA, typ.). The GLF1200Q features a true reverse-current blocking, which prevents a backup power source from being discharged when an […]
SO 26262, ASIL‑B PMICs handle automotive camera modules
ROHM Semiconductor announced the availability of ISO 26262 and ASIL-B-compliant PMICs, BD868xxMUF-C (BD868C0MUF-C, BD868D0MUF-C), for automotive camera modules, which are increasingly being adopted in advanced driver-assistance systems (ADAS). The continuing evolution of ADAS in recent years has increased the number of onboard cameras. At the same time, introducing the concept of functional safety is taking on […]
Half-bridge 650-V GaN-on-silicon power circuit handles up to 3 kW
Wise-integration, a pioneer in digital control of gallium-nitride (GaN) power supplies and GaN ICs, has launched its first commercial product: the 120mOhm WI62120 half-bridge power circuit, providing power electronics designers with new levels of power density, performance, and cost-effectiveness. The JEDEC-certified WI62120, a 650V enhancement-mode GaN-on-silicon integrated circuit, is part of Wise-integration’s WiseGan family of power […]
Configurable SiC digital gate drivers and the electrification revolution
Silicon-carbide MOSFETs and digital gate drivers work together to make electrified metro, subway, and other heavy transportation vehicles possible. Nitesh Satheesh, Tomas Krecek, Perry Schugart, Xuning Zhang, Kevin Speer, Microchip Technology Green initiatives continue to transform power electronic system designs in industrial, aerospace, and defense applications, and especially the transportation sector. Silicon Carbide (SiC) technology […]
GaN power semis boast 120mΩ max RDS(on), at 15A max current capability
STMicroelectronics has revealed a new family of GaN power semiconductors in the STPOWER portfolio that can significantly reduce energy use and enable slimmer designs in a huge variety of electronic products. Target applications include consumer equipment such as chargers, external power adapters for PCs, LED-lighting drivers, and power supplies inside televisions and home appliances. This equipment […]
The evolution of smart MOSFET technologies
A review of MOSFET advances helps predict where the technology is likely to head. Ashita Mirchandani, Bastian Lang • Infineon Technologies The past 50 years have seen unprecedented changes enabled by technology. The trend will continue with emerging technologies such as e-mobility, the Internet of Things (IoT), artificial intelligence, connectivity and 5G. At the heart […]
SiC power FETs boast super-low 6-mΩ RDS(on)
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]
JEDEC publishes new test method for continuous-switching evaluation of GaN devices
JEDEC Solid State Technology Association announces the publication of JEP182: Test Method for Continuous-Switching Evaluation of Gallium Nitride Power Conversion Devices. Developed by JEDEC’s JC-70 Committee for Wide Bandgap Power Electronic Conversion Semiconductors, JEP182 is available for free download from the JEDEC website. To enable the successful adoption of GaN power transistors, both reliable operation in power […]
Automotive 40/60-V MOSFETs are AEC-Q101 qualified
The TQM Family of single and dual N-channel automotive-grade power MOSFETs are offered with drain-to-source breakdown voltage (BVDSS) of either 40 or 60 V. All of the 14 parts in this AEC-Q101 family feature a maximum operating temperature (Tj) of 175° C. And unlike many other products in this class, all are 100% tested for […]
