Reed relays have evolved from their audio roots to handle GHz signals; MEMS technology may push them aside. Electromechanical relays are like dinosaurs that haven’t gotten the news that they are supposed to be extinct. Instead, they beget new generations, get designed into new applications, and even take over new territory. Countless millions of these […]
Semiconductor
GaN laser driver enables pulse widths as narrow as 5 ns with 10+ amp peak currents
Efficient Power Conversion has expanded its product lineup with the introduction of the EPC91116, a laser driver evaluation board designed for indirect time-of-flight applications in automotive and industrial sensing environments. The board is built around the automotive-qualified EPC2203 gallium nitride power transistor, enabling nanosecond-scale performance with a straightforward architecture. The EPC91116 addresses growing demand for […]
Are SiC and GaN going to be replaced by ultra power semis?
With the recent announcement by Infineon that gallium nitride (GaN) use is reaching the “tipping point” for accelerated adoption, maybe it’s time to consider what’s next beyond wide bandgap (WBG) GaN and silicon carbide (SiC) devices. Next-generation ultra-wide bandgap (UWBG) power semiconductors are being developed that may replace current WBG options. UWBG semiconductors have bandgap […]
Fast-response fuses target data center and EV applications
Littelfuse has introduced the QS series of high-speed semiconductor fuses designed for protecting power semiconductor devices. The cylindrical 10 mm x 38 mm fuses feature higher current ratings and rapid response times to limit fault currents. These fast-acting fuses offer short-circuit protection while reducing heat energy transfer to protected devices. The QS series handles repeated on/off switching […]
Wide bandgap power devices from industrial motors to 8.5 kW data center systems
Navitas Seminconductor is demonstrating new gallium nitride (GaN) and silicon carbide (SiC) power semiconductor technologies at electronica 2024, focusing on applications in AI data centers, electric vehicles, renewable energy, and industrial systems. A new 8.5 kW power supply for AI and hyperscale data centers combines GaN power ICs with third-generation SiC MOSFETs. The SiC components, […]
Multi-output power supply IC features 1700 V GaN switch
Power Integrations has introduced a 1700 V gallium nitride (GaN) switch, the 1700 V InnoMux-2. marking a new technical milestone in high-voltage power semiconductors. The technology is implemented in the company’s InnoMux-2 family of power supply ICs, designed for multi-output power supplies operating from high-voltage DC sources. “The new device is fabricated using our PowiGaN™ technology. […]
APEC 2024: Semiconductors, modules, transformers, and chargers
Power supplies from phone chargers to EVs to industrial machinery rely on semiconductors, either in discrete packages or integrated into power modules, to deliver power. APEC 2024 was full of power sources and components. The roundup below highlights regulators, switches, and power semiconductors. We also highlight wireless power delivery and chargers. Be sure to see […]
JEDEC committee releases key guidelines for GaN power device reliability assessment
The JEDEC Solid State Technology Association has released JEP198, a new guideline document for assessing the reliability of Gallium Nitride (GaN) power conversion devices. The document, crafted by the JC-70.1 Gallium Nitride Subcommittee, is now freely accessible for download on the JEDEC website.JEP198 offers a framework for evaluating the Time Dependent Breakdown (TDB) reliability of […]
Renesas subsidiary acquires GaN technology company,Transphorm
Renesas Electronics Corporation and Transphorm, Inc. today announced that they have entered into a definitive agreement pursuant to which a subsidiary of Renesas will acquire the GaN . The acquisition will provide Renesas with in-house GaN technology, a key next-generation material for power semiconductors, expanding its reach into fast-growing markets such as EVs, computing (data […]
PIMs now available for power conversion stages in DC fast charging and ESS applications
Today onsemi announced the availability of nine new EliteSiC Power Integrated Modules (PIMs) enabling bidirectional charging capabilities for DC ultra-fast electric vehicle (EV) chargers and energy storage systems (ESS). The silicon carbide-based solutions will dramatically improve system cost with higher efficiency and simpler cooling mechanisms that can reduce size by up to 40% and weight […]
