Littelfuse, a global designer in circuit protection, introduced the latest addition to its growing line of power semiconductor products, the LFUSCD Series of Silicon Carbide (SiC) Schottky Diodes, at the European Power Conversion and Intelligent Motion 2016 exhibition in Nuremberg, Germany.
When compared to standard silicon bipolar power diodes, LFUSCD Series SiC Schottky diodes allow designers to reduce switching losses, accommodate large surge currents without thermal runaway and operate at higher junction temperatures, all of which enable substantial increases in system efficiency and robustness.
The merged p-n Schottky (MPS) device architecture of the LFUSCD Series ensures enhanced surge capability and reduced leakage current. Available in voltage ratings of 650 V and 1200 V at current ratings ranging from 4 A to 30 A, they are well-suited for a broad range of markets, such as industrial power supplies, solar inverters, industrial drives, welding and plasma cutting and EV/HEV charging stations.
LFUSCD Series SiC Schottky Diodes improve the efficiency, reliability and thermal management of applications, such as:
- Power factor correction (PFC);
- Buck or boost stages in DC-DC converters;
- Free-wheeling diodes in inverter stages (switch-mode power supplies, solar, UPS and industrial drives); and
- High frequency output rectification.
Availablity
LFUS Series SiC Schottky Diodes are available in tubes in TO-220 two-lead and TO-247 three-lead packages. Sample requests can be placed through authorized Littelfuse distributors worldwide.
Littelfuse
www.littelfuse.com
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