Taiwan Semiconductor announces its new TESD Series of single-channel ESD clamping diodes offering size and performance specifications optimized for wearable applications. The new TESD devices’ unique design features proprietary bidirectional clamping cells (for ESD protection up to ±30kV) in an ultra-small DFN0603 package. The devices in the new TESD Series are offered in versions with 5.0V […]
diodes
Ultra-low capacitance ESD devices protect high-speed data lines
Nexperia announced an extension to its portfolio of ultra-low capacitance ESD protection diodes designed to protect high-speed data lines in interfaces such as USB, HDMI, high-speed video links, and ethernet in automotive infotainment applications. These latest additions include PESD18VF1BLS-Q, PESD24VF1BLS-Q, PESD30VF1BLS-Q, and PESD32VF1BLS-Q in the DFN1006BD-2 package which enables optical inspection in automotive production lines using […]
Schottkys in DPACK footprint offer drop-in improvements in power density, thermal performance.
Taiwan Semiconductor announces its new ThinDPAK family of ultra-fast-recovery Schottky rectifiers. ThinDPAK devices have the same footprint as standard DPAKs – but come in a thinner (1.33mm) package and offer superior power density and thermal performance. Fully AEC-Q qualified with a maximum operating temperature (Tj, max) of 175°C and typical reverse-recovery time of 25ns, ThinDPAKs assure […]
SiC Schottky barrier diodes deliver 5 A to 10 A
Bourns, Inc. announced it has expanded its 650 and 1200 V Silicon Carbide (SiC) Schottky Barrier Diode (SBD) product family with 10 new models. The 10 new models added to the Bourns SiC SBD line are designed to address the increasing power density requirements in the latest transportation, renewable energy, and industrial systems. Bourns’ expanded wide […]
MOSFETs for high-voltage ECUs feature EC7 co-packed diode with emitter-controlled design
Infineon Technologies AG expands its 7th generation TRENCHSTOP IGBT family with the discrete 650 V IGBT7 H7 variant. The devices feature a cutting-edge EC7 co-packed diode with an advanced emitter-controlled design, coupled with high-speed technology to address the escalating need for environmentally conscious and highly efficient power solutions. Using the latest micro-pattern trench technology, the […]
TVS diodes protect automotive circuits and systems
Littelfuse, Inc. announced the release of its new SZSMF4L 400 W TVS Diode Series. As automotive electronics continue increasing in volume and sophistication, all these components require protection from high voltage, high energy transients. The SZSMF4L TVS Diodes protect these sensitive systems with fast response time, low Zener impedance, high surge handling, and excellent clamping […]
175°C-qualified IGBTs integrate fully-rated fast recovery diodes
Nexperia launched its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600 V devices, starting with the 30 A NGW30T60M3DF. By adding IGBTs to its extensive portfolio, Nexperia is addressing the growing demand for efficient, high-voltage switching devices with a range of performance and cost requirements. These enable higher power […]
SiC Schottky barrier diodes handle 1200 V
Bourns, Inc. announced its first 650 V – 1200 V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs). The Bourns SiC SBD line consists of six models engineered to provide excellent current carrying and thermal capabilities and high power density for increased performance and reliability. These capabilities make Bourns SiC SBDs optimal high-efficiency power conversion solutions for the growing variety […]
Surface-mount TVS diodes protect power supplies from transients
Littelfuse, Inc. announced the release of its latest product, the LTKAK2-L Series High Power TVS Diodes. This surface mount solution addresses the market demand for automated PCB assembly process-compatible TVS diodes with a high surge rating. By using one LTKAK2-L in place of either four or eight 15KPA or 30KPA axial-leaded TVS diodes, electronics designers […]
650 V SiC diodes operate at 650 and 1200 V
Nexperia introduced a 650 V Silicon Carbide (SiC) Schottky diode designed for power applications that require ultra-high performance, low loss, and high efficiency. The 10 A, 650 V SiC Schottky diode is an industrial-grade part that addresses the challenges of demanding high voltage and high current applications. These include switched-mode power supplies, AC-DC and DC-DC […]
