STMicroelectronics has introduced three radiation-hardened low-voltage rectifier diodes intended for power conversion and protection circuits used in Low Earth Orbit satellites. The LEO1N58xx devices are supplied in SOD128 plastic packages and are positioned for use in switched-mode power supplies and high-frequency DC-DC converter stages where low forward drop and fast recovery support efficiency and transient […]
diodes
SiC MOSFET family adds Schottky-diode versions for lower switching losses
SemiQ Inc. has expanded its 1200 V Gen3 SiC MOSFET line with five SOT-227 power modules offering RDS(on) values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. The new GCMS versions incorporate Schottky barrier diodes, which reduce switching losses at elevated temperatures compared with the non-SBD GCMX variants. The modules are intended for medium-voltage, high-power […]
Protecting Ethernet interfaces in telecommunications applications against common high energy surges
The global market for industrial Ethernet applications will see strong growth. In one estimate, it’s expected to grow from around $11B in 2023 to nearly $20B by 2030, according to Grand View Research. However, telecommunications application successes are at the mercy of obstacles like circuit protection. As a result, the same research firm found that […]
24-V snapback TVS offers lower clamping voltage and higher current
Taiwan Semiconductor has introduced new 24-volt automotive-grade SUPER CLAMP transient voltage suppression (TVS) devices designed to protect sensitive electronic circuits from voltage transients. The devices feature low clamping voltage, high peak pulse current capability, and compact surface-mount packaging to support space-constrained automotive designs. The SUPER CLAMP family offers snapback operation that enables lower clamping voltage […]
Low-forward-voltage 1,200 V diodes target high-power rectification
A new family of 1,200 V rectifier diodes is available in ThinDPAK, D2PAK-D, and TO-247BD packages from Taiwan Semiconductor. The devices are offered with current ratings of 15 A, 30 A, and 60 A. Each diode series supports a maximum forward-voltage rating of 1.3 V and maintains low reverse leakage below 10 µA at 25 […]
ESD protection diodes withstand +/-18 kV events and 9.6 A surge currents
Nexperia introduced a new series of five high-performance protection 1 V diodes that provide optimized protection for AC-coupled radio-frequency (RF) transmission lines against electrostatic discharge (ESD) events, surge currents, and short circuit conditions. These diodes – examples include the PESD1V0C1BSF and PESD1V0H1BSF – are ideal for safeguarding USB4 and ThunderboltTM interfaces found in various applications, including cellular […]
TVS diodes use foldback technology to cut clamping voltage
Littelfuse, Inc. announced the launch of the 5.0SMDJ-FB TVS Diode Series, a 5000 W surface-mount solution in a DO-214AB package engineered to protect sensitive DC power lines from overvoltage transients. The new series incorporates foldback technology, which delivers up to 15% lower clamping voltage (VC) compared to traditional solutions, while maintaining Breakdown Voltage (VBR) above the Reverse Standoff […]
Automotive ESD diodes deliver 3.4 pF capacitance in SOT23 package format
Nexperia introduced the industry’s first ESD diodes designed to protect 48 V automotive data communications networks against the destructive effects of electrostatic discharge (ESD) events. This new portfolio of six robust AEC-Q101 qualified devices covers the required higher reverse working maximum voltage (VRWM) for increasingly common 48 V board nets. This ultimately saves PCB space and […]
Schottky diodes feature merged PiN structure with zero recovery behavior
Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been designed to address the demand for ultra-low power loss rectifiers, which enable high-efficiency energy conversion in industrial applications. As such, they are ideally suited for […]
Integrated gate driver combines bootstrap diode and current limit resistor in 3×3 mm package
Littelfuse, Inc. has released the IXD0579M high-speed gate driver IC designed for driving N-channel MOSFETs or IGBTs in half-bridge configurations. The device operates across a 6.5 V to 18 V supply range and integrates both a bootstrap diode and a series current limit resistor into a single 3×3 mm² TDFN-10 package, reducing component count and simplifying PCB […]
