Littelfuse, Inc. announced the launch of the 5.0SMDJ-FB TVS Diode Series, a 5000 W surface-mount solution in a DO-214AB package engineered to protect sensitive DC power lines from overvoltage transients. The new series incorporates foldback technology, which delivers up to 15% lower clamping voltage (VC) compared to traditional solutions, while maintaining Breakdown Voltage (VBR) above the Reverse Standoff […]
diodes
Automotive ESD diodes deliver 3.4 pF capacitance in SOT23 package format
Nexperia introduced the industry’s first ESD diodes designed to protect 48 V automotive data communications networks against the destructive effects of electrostatic discharge (ESD) events. This new portfolio of six robust AEC-Q101 qualified devices covers the required higher reverse working maximum voltage (VRWM) for increasingly common 48 V board nets. This ultimately saves PCB space and […]
Schottky diodes feature merged PiN structure with zero recovery behavior
Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been designed to address the demand for ultra-low power loss rectifiers, which enable high-efficiency energy conversion in industrial applications. As such, they are ideally suited for […]
Integrated gate driver combines bootstrap diode and current limit resistor in 3×3 mm package
Littelfuse, Inc. has released the IXD0579M high-speed gate driver IC designed for driving N-channel MOSFETs or IGBTs in half-bridge configurations. The device operates across a 6.5 V to 18 V supply range and integrates both a bootstrap diode and a series current limit resistor into a single 3×3 mm² TDFN-10 package, reducing component count and simplifying PCB […]
Meeting demand for hidden wearables via Schottky rectifiers
Consumers demand increasingly powerful yet compact electronic devices in today’s fast-paced world. From smartphones and laptops to wearable technology, these devices must deliver high performance while fitting into our increasingly mobile lifestyles. Engineers constantly seek innovative solutions to meet these demands and enhance device efficiency, battery life, and overall user experience. Advancements in battery technology […]
Surface-mount Zener diodes debut with wide voltage range and small footprint
MCC has introduced the SMAF Series Zener diodes, a comprehensive product family offering 6.2 V to 100 V options with overvoltage protection capabilities. These 1 W Zener diodes come in the compact DO-221AC (SMA-FL) surface-mount package, enabling integration across various applications while delivering consistent performance in challenging environments. The SMAF Series features a low-profile DO-221AC […]
Automotive IGBT chips feature 185 °C maximum junction temperature
Infineon Technologies AG is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products. Among these offerings are the EDT3 (Electric Drive Train, 3rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance […]
GaN transistors add Schottky diodes to boost converter efficiency
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the […]
4A – 12A SiC diode series features 20 µA max reverse leakage current
Diodes Incorporated announces the expansion of its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power switching applications, such as DC […]
100V 1.5 mΩ GaN transistor features built-in Schottky diode in 3 x 5 mm package
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the […]
