By Roger Allan, contributing writer There’s good news for power supply system designers. Silicon-based power devices are making performance advances in diode, transistor, and field-effect transistor (FET) functions. But wide-bandgap semiconductor IC technologies like gallium nitride (GaN) and silicon carbide (SiC) are poised to grow rapidly, offering designers greater performance in a smaller package, making […]
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GaN Product Selector Guide online now
EPC is pleased to announce the implementation of a user-controlled GaN product selector search tool on the EPC website, epc-co.com. Based upon years of EPC customer interactions, this web-based product selector guide provides power system design engineers the following: An ability to conduct easy-to-use parametric searches for eGaN FETs and ICs to narrow searches for […]
Dev board for eGaN power FETs targets LiDAR apps
Efficient Power Conversion Corporation (EPC) announces the EPC2040 power transistor, an extremely small, fast switching gallium nitride power transistor that enables superior resolution, faster response time, and greater accuracy for high speed end-use applications. High stability of the threshold over temperature ensures the high stability as the laser heats up. For example, this product is […]
Dev boards speed development of GaN transistor designs for class-E/D amps, push-pull converters up to 30 MHz
Efficient Power Conversion Corporation (EPC) has announced high efficiency, GaN-based differential mode development boards that can operate up to 30 MHz. These boards provide an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly. These development boards are designed for class-E […]
