EPC & Richtek announces the availability of a 4-switches bidirectional buck-boost controller reference design board that converts an input voltage of 12 V – 24 V to a regulated 5 V – 20 V output voltage and delivers up to 5 A continuous current and 6.5 A maximum current. The combination of the new Richtek […]
epc
GaN FETs feature low on resistance with 150/200-V ratings
EPC introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with an exposed top and tiny 3 mm x 5 mm footprint. These devices are the lowest on-resistance (RDS(on)) FETs in the market at 150 V and 200 V in a size that […]
eGaN power FETs feature high power density, tiny footprint
EPC launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products. The EPC2619 has an RDS(on) of just 4 mOhms in a tiny, 1.5 mm x 2.5 mm, footprint. The maximum RDS(on) x Area of […]
GaN 3-phase BLDC motor drive delivers 20 A
EPC announces the availability of the EPC9176, a 3-phase BLDC motor drive inverter using the EPC23102 ePower Stage GaN IC with embedded gate driver function and two GaN FET with 5.2 mΩ typical RDS(on). The EPC9176 operates from an input supply voltage between 20 V and 80 V and can deliver up to 28 Apk […]
Dispelling Myths: Don’t believe it when they say you need a bipolar gate drive for eGaN FETs
Use of a negative gate drive can lead to a larger voltage drop during deadtime and severe losses. Andrea Gorgerino, EPC GaN devices have gone from initial R&D to mainstream designs over the last 15 years. Unfortunately, there are many misunderstandings left-over from those early-stage developments or dead-end technology branches. One of the most pernicious […]
GaN FETs optimized for 48-V dc/dc power conversion
EPC expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 100 V EPC2306 designed for 48 V DC-DC conversion used in high-density computing applications, in 48 V BLDC motor drives for e-mobility and robotics, and in solar optimizers and microinverters, and Class D Audio. The EPC2306 GaN […]
100-V, 35-A IC chipset targets 48-V DC-DC conversion tasks
EPC announces the introduction of a 100 V, 35 A integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23102 eGaN IC is capable of a maximum withstand voltage of 100 V, delivering up to 35 A load […]
Rad-hard GaN FET comes in small 6.56-mm-sq footprint
EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 APulsed, rad-hard GaN FET in a small 6.56 mm2 footprint. The EPC7004 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7004, along with the rest […]
Rad-hard 100-V GaN transistor offers lowest on-resistance
EPC has introduced the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 APulsed, rad-hard GaN FET in a small 13.9 mm2 footprint. The EPC7018 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7018, along with the rest of the […]
Rad-hard 200-V GaN transistor boasts ultra-low on-resistance, tiny footprint
EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007, a 200 V, 25 mΩ, 80 APulsed, rad-hard GaN FET in a small 5.76 mm2 footprint. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, […]
