TDK Corporation announces the expansion of the ADL4532VK series (4.5 x 3.2 x 3.2 mm; L x W x T) of wire winding inductors for automotive power-over-coax (PoC). Mass production of these new components began in February 2025. Advanced driver-assistance systems (ADAS) are designed to enhance vehicle safety by using automotive cameras and sensors that […]
Data center
Power controller handles high-current AI systems to OpenVReg16 specifications
Alpha and Omega Semiconductor Limited unveiled its AOZ73016QI, a 16-phase, 2-rail controller specifically designed to the latest OpenVReg16 (OVR16) specifications from NVIDIA. The AOZ73016QI controller design is based on the company’s high-performance, proprietary AOS Advanced Transient Modulator (A2TM) control scheme. In addition to supporting all the basic requirements of the OVR16 specification, the new AOS controller […]
150 V MOSFET claims new low for on resistance
Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6×5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3 % and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power […]
Multilayer inductors support 480 mA current in PoC applications
TDK Corporation announces the expansion of the MLJ1005-G series (1.0 x 0.5 x 0.5 mm; L x W x T) of multilayer inductors for automotive Power-over-Coax (PoC) circuits. Mass production of these new components began in November 2024. Advanced driver assistance systems (ADAS) are designed to enhance vehicle safety by using automotive cameras and sensors […]
Fast-response fuses target data center and EV applications
Littelfuse has introduced the QS series of high-speed semiconductor fuses designed for protecting power semiconductor devices. The cylindrical 10 mm x 38 mm fuses feature higher current ratings and rapid response times to limit fault currents. These fast-acting fuses offer short-circuit protection while reducing heat energy transfer to protected devices. The QS series handles repeated on/off switching […]
Wide bandgap power devices from industrial motors to 8.5 kW data center systems
Navitas Seminconductor is demonstrating new gallium nitride (GaN) and silicon carbide (SiC) power semiconductor technologies at electronica 2024, focusing on applications in AI data centers, electric vehicles, renewable energy, and industrial systems. A new 8.5 kW power supply for AI and hyperscale data centers combines GaN power ICs with third-generation SiC MOSFETs. The SiC components, […]
8.5 kW PSU achieves 98% efficiency for AI and data centers
Navitas Semiconductor has released an 8.5 kW power supply unit (PSU) that utilizes GaN and SiC technologies and has achieved 98% efficiency for AI and hyperscale data centers. The AI-optimized 54V output PSU meets Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. It incorporates GaNSafe and Gen-3 Fast SiC MOSFETs in 3-phase interleaved […]
Power modules target data center energy reduction amid AI growth
Infineon Technologies AG is launching the TDM2354xD and TDM2354xT dual-phase power modules with best-in-class power density for high-performance AI data centers. These modules enable true vertical power delivery (VPD) and offer the industry’s best current density of 1.6 A/mm 2. They follow the TDM2254xD dual-phase power modules introduced by Infineon earlier this year. The TDM2354xD and TDM2354xT […]
Solid-state relay switches 100 V in 0.1 ms
Vishay Intertechnology, Inc. introduced the industry’s first 1 Form A solid-state relay to offer AEC-Q102 qualification and a 100 V load voltage. Offered in the low profile SOP-4 package, the Vishay Semiconductors VORA1010M4 delivers the industry’s fastest turn-on and turn-off times of 0.1 ms typical, in addition to the highest operating temperature of +125 °C. […]
Asymmetrical TVS diode protects SiC MOSFETS
Littelfuse, Inc. announced the SMFA Asymmetrical Series Surface-Mount TVS Diode, the first-to-market asymmetrical TVS solution specifically designed to protect Silicon Carbide (SiC) MOSFET gates from overvoltage events. As SiC MOSFETs become increasingly popular due to their faster switching speeds and superior efficiency compared to traditional Silicon MOSFETs and IGBTs, the need for robust gate protection […]
