Hitachi Ltd. says it has developed a new kind of silicon-carbide-based MOSFET that has dramatically lower on resistance than comparable devices. The new MOSFET uses what Hitachi calls a TED-MOS structure, for Trench-etched DMOS-FET. Compared to conventional DMOS-FET (Double-diffused MOSFET) devices, the new structure is said to reduce electric field strength, an index of durability […]
