Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 1000V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system size. The new MOSFET, specially optimized for fast charging and industrial power supplies, enables a 30 percent reduction in component count while […]
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GaN HEMT targets C-Band radar systems.
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, announces their complete lineup of high efficiency, high gain, and wide bandwidth C-Band radar parts with the market introduction of the new CGHV59070 GaN HEMT for C-Band radar systems. Designed […]
900V SiC MOSFET for high frequency power applications
Cree, Inc. has introduced its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with […]
Cree MOSFET, Schottky diode design kit
Cree, Inc. has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree® MOSFET and Schottky diode performance in a configurable half bridge circuit. Quick and easy to assemble and use, the new design kit enables comparative testing between IGBTs and Cree MOSFETs, and provides an effective layout […]
New GaN HEMT power devices work at 50 V
Cree, Inc., a global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components: a 20W, 6GHz die; a 75W, 6GHz die; and a 320W, 4GHz die. Currently comprised of five die, […]
Spice model for SiC MOSFETs
Cree, Inc., has expanded the company’s design-in support for the C2M Series SiC MOSFET power devices with the release of a new SPICE model. Fast and accurate, the new model effectively demonstrates the benefits of Cree SiC MOSFETs – including the C2M0025120D device, which recently pierced the on-resistance barrier by delivering 1200 V of blocking […]
20-A SiC module targets15-kW 3-phase apps
Cree, Inc. (Nasdaq: CREE) has expanded the award-winning silicon carbide (SiC) 1.2 kV six-pack power module family with a new 20A all-SiC module ideally suited for 5-15 kW three-phase applications. Based on Cree’s C2M™ SiC MOSFET and Z-Rec® SiC Schottky diode technology, the six-pack module enables designers to unlock the traditional constraints of power density, […]
GaN HEMTs hit 6 GHz
Cree, Inc., a global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6GHz. The new 40W CGHV60040D and 170W CGHV60170D represent the only 50V bare GaN HEMT die available on the market and […]
Half-bridge SiC power module handles 1.7 kV
Cree, Inc. (Nasdaq: CREE) continues to extend its leadership in silicon-carbide (SiC) power-device technology with the release of the industry’s first all-SiC, 1.7-kV power module in an industry-standard 62-mm housing. Powered by Cree’s C2M™ large-area SiC chip technology, the new half-bridge module exhibits an impressive 8-mΩ on-resistance and 10-times higher switching efficiency than existing silicon […]
SiC MOSFETs will power solar inverters
Cree, Inc. (Nasdaq: CREE) has announced that its C2M™, 1200V, 80mOhm SiC MOSFETs have been selected by Sanix Corporation, Japan, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of commercial photovoltaic systems in the fast-growing Japanese solar energy market. “Through this partnership with Cree and their SiC technology, […]
