GaN Systems will show visitors how customers are achieving higher levels of performance in power electronics at electronica 2018 taking place in Munich on November 13-16. The company will share key observations and insights on the automotive sector and showcase its latest solutions and design tools at the GaN Systems booth located in Hall B5, Booth 430. […]
ROHM and GaN Systems join forces for GaN power semiconductors
ROHM and GaN Systems announced their collaboration in the GaN (gallium nitride) Power Semiconductor business, with the goal of contributing to the continuing evolution of power electronics. This strategic partnership leverages GaN Systems’ industry leading capabilities in power GaN transistors along with ROHM’s comprehensive footprint in semiconductor and considerable resources in the design and manufacture of electronic components. The companies […]
GaN-based wireless power amps provide 100 and 300 W
GaN Systems unveiled two wireless power amplifiers that will revolutionize the wireless charging market for high-power consumer, industrial, and transport applications. These new solutions include the 100 W power amplifier with ranges from 70 W to 100 W and the 300 W power amplifier with ranges from 150 W to 1 kW. GaN Systems is displaying […]
Students take GaN from design to build in China Power Supply Society design competition
In support of worldwide innovation in the power electronics industry, GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, is once again sponsoring the distinguished China Power Supply Society (CPSS) design competition, which is currently underway with many top engineering teams participating from leading universities throughout China. The fourth annual “GaN Systems Cup,” continues to promote […]
Gallery: Cool tech demos at APEC2018, IEEE’s Applied Power Electronics Conference and Exposition
APEC is considered the premier forum for power electronics developments in the U.S. Recently concluded in San Antonio, Tex., the conference and exposition focused on the practical and applied aspects of the power electronics business. In the pages that follow are a few interesting displays that could be found on the exposition floor. NEXT PAGE: […]
GaN power transistors hit 100 V, 120 A
GaN Systems unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of GaN Systems’ own 90 A part and 2.4X-to-4.6X the current rating of other high current GaN in the industry. The GS-010-120-1-T is an […]
GaN power transistor handles 120 A
GaN Systems announced the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The numerous advantages of GaN can be applied to much higher power levels today in the automotive, industrial, and […]
Buck converter evaluation board employs 100-V E-Mode GaN transistors
GaN Systems, the global leader in GaN power semiconductors, today announced the availability of its 5MHz buck converter evaluation board (GS61008P-EVBHF) using GaN Systems’ 100V E-Mode GaN transistors and pSemi’s PE29101 integrated high-speed driver. The outputs of the pSemi driver can provide switching transition speeds in the sub nano-second range. This evaluation board allows customers […]
Eval board includes fast GaN power transistors and E-HEMT drivers
From Beethoven to Beyoncé and from the Allman Brothers to ZZ Top, your music sounds better with higher highs, lower lows, and less harmonic distortion. From heavy-duty industrial cutting lasers to delicate, precise medical lasers, the result is better with fast turn-on, fast turn-off, and short duration power pulses. DC-DC converters for Data Center and […]
High-speed GaN FET driver switches at 40 MHz
Audio systems are challenged to both minimize size and deliver exceptional audio quality to listeners. At the system-design level, better audio performance and sound quality occur when distortion is reduced. MOSFET components have parasitic diodes and gate capacitance that creates jitter and distortion in class-D audio systems, whereas GaN FETs have much smaller gate capacitance […]
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