GaN Systems a leading global provider of computing power infrastructure and services, introduced the 3kxFusion W PSU, the world’s first 100W/in3 with 80 Plus Titanium efficiency solution. This groundbreaking data center power supply is displayed in the GaN Systems booth #509 (Hall 9) at PCIM Europe 2022. The increasing demand for more data and power combined […]
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GaN reference design covers 300-W audio boost converter
GaN Systems announced the launch of its 300W Audio Boost Converter SMPS at the 37th annual Applied Power Electronics Conference (APEC) in Houston. The 300W reference design, targeted for automotive, marine, motorcycle, and a broad range of 12VDC input applications, features a complete turnkey platform solution that accelerates time-to-market, delivering improved audio quality and smaller, more streamlined audio […]
3-kW bridgeless totem pole PFC + LLC converter exceeds 80 PLUS titanium standard
GaN Systems introduced a high efficiency, highest power density 3kW Bridgeless Totem Pole (BTP) PFC + LLC Resonant Converter Power Supply Unit (PSU) that exceeds the 80 PLUS Titanium standard. The combined GaN BTP-PFC with GaN LLC resonant converter enables designers to create lower-cost power supplies that meet demands to deliver more power in a smaller footprint and […]
GaN power transistors handle up to 3 kW
GaN Systems introduced two new transistors in the industry’s broadest portfolio of GaN power transistors. The transistors are packaged in a standard 8×8 mm PDFN package. The GS-065-011-2-L allows users to reduce the cost per watt of delivered powered in 45W to 150W applications and the GS-065-030-2-L is the first GaN product on the market that enables designers to get […]
Dev board handles GaN-based 300-W bridgeless totem pole PFC design
GaN Systems and ON Semiconductor released a new 300W BTP-PFC Bridgeless Totem Pole Power Factor Correction (PFC) evaluation board. The board includes ON Semiconductor’s NCP1680, the industry’s first dedicated critical conduction mode (CrM) bridgeless totem-pole PFC controller, and GaN Systems’ 650V GS66508B GaN transistors. The NCP1680 controller and GS66508B transistors combine to deliver an innovative cost-effective and high-performing solution in […]
Automotive-grade 650-V GaN transistors handle 60 A
GaN Systems announced the expansion of its family of automotive-grade 650V transistors. The GS-065-060-5-B-A is a 60A, bottom-side cooled transistor developed for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC converters. The high-frequency properties of GaN combined with GaN Systems’ proprietary Island Technology layout, and GaNPX packaging provides the high power, low […]
Reference design details GaN-based 3-kW LLC resonant converter
GaN Systems introduced a new reference design for a high density, high efficiency GaN-based 3kW LLC Resonant Converter (GS-EVB-LLC-3KW-GS) aimed to reduce design cycles, costs, and time to market for companies developing data center, telecom, and industrial switching mode power supply (SMPS) applications. The full-bridge LLC resonant converter design, integrating GaN Systems’ 650 V E-mode transistors, exceeds the […]
Reference design covers 100-W GaN charger
GaN Systems announced the release of the industry’s smallest 100W dual USB-C intelligent PD GaN charger. This turnkey reference design achieves the highest power density of any 100W charger on the market while being the smartest. The charger can balance and appropriately power a variety of plugged-in device power level combinations from a single 100W […]
Reference design covers high-efficiency GaN-based 65-W active clamp flyback charger
GaN Systems announced a new reference design for the highest power density, high efficiency GaN-based 65W Active Clamp Flyback (ACF) charger in collaboration with Silanna Semiconductor. The reference design is now available at Silanna Semiconductor and provides an easy design for ACF USB-C PD GaN chargers, reducing design cycles and product time to market for customers. This solution […]
Half-bridge PCBs help evaluate GaN drivers, transistors
GaN Systems announced the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to 3kW (GS-EVB-HB-66508B-RN) and up to 6kW (GS-EVB-HB-66516T-RN), and include the Renesas RAA226110 low-side GaN FET driver. These cards are the industry’s […]
