The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an industry-standard SOT-227 form factor for medium to high frequency power applications. The modules support single switch and low-side chopper configurations with continuous drain currents from 50 A to 200 A and on-resistance as low as 12.1 […]
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Diode modules keep voltage drops low
The 100 V Gen 2 TMBS rectifier modules from Vishay Intertechnology are fully insulated devices in a compact SOT-227 package designed for industrial power conversion applications. The lineup includes dual-diode modules rated at 100 A, 200 A and 400 A and a 150 A single-phase bridge, offering forward voltage drops as low as 0.83 V, […]
Automotive-grade 1 solid-state relay targets EV and ESS designs
Vishay Intertechnology has introduced the VORA1150, a 1500 V, Automotive Grade 1, 1-Form-A solid-state relay in a 4-pin SMD-8 package. The device is intended for 800 V battery monitoring systems used in automotive, energy storage, and industrial equipment. It provides a repetitive isolation voltage of 1414 Vpeak and a maximum leakage current of 1 µA. […]
Power resistor dissipates up to 35 W
Vishay Intertechnology, Inc. announced that it has extended its D2TO35 series of surface-mount thick film power resistors with a new AEC-Q200 qualified device that delivers higher pulse absorption up to 15 J/0.1 s. Offered in the TO-263 (D²PAK) package, the Vishay Sfernice D2TO35H provides high power dissipation of 35 W at a +25 °C case temperature. […]
550 mA, 5A SSRs replace electromechanical relays
Vishay Intertechnology, Inc. introduced two new industrial-grade 1 Form A solid-state relays in the surface-mount SOP-4 package. The Vishay Semiconductors VO1401AEFTR and VOR1003M4T combine high continuous load current of 550 mA and 5 A, respectively, with load voltages of 60 V and 30 V, isolation voltage of 3750 VRMS, and low leakage current of < […]
Power MOSFET reaches 0.048 Ω RDSon
Vishay Intertechnology, Inc. introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2 % while offering a 65.4 % lower resistance times gate charge, a key figure of […]
SiC Schottky diode range handles 40 A to 240 A
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high-frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class. The devices released […]
Solid-state relay switches 600 V to loads
Vishay Intertechnology, Inc. introduced a 1 Form A solid-state relay offering a 600 V load voltage and isolation voltage of 3750 VRMS in the low profile SOP-4 package. Designed to deliver fast switching for energy storage, industrial and mobility applications, the Vishay Semiconductors VOR1060M4 provides a fast turn-on time of 0.3 ms typical and low leakage current of […]
Power MOSFET achieves 0.34 mΩ on resistance
Vishay Intertechnology, Inc. introduced a new 40 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK 10×12 package with best-in-class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 % while offering 58 % lower on-resistance than 40 V MOSFETs in the TO-263-7L. With on-resistance down to […]
150 V MOSFET claims new low for on resistance
Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6×5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3 % and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power […]
