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MOSFETS

More power IC technologies challenge design decisions

August 29, 2016 By Aimee Kalnoskas Leave a Comment

By Roger Allan, contributing writer There’s good news for power supply system designers. Silicon-based power devices are making performance advances in diode, transistor, and field-effect transistor (FET) functions. But wide-bandgap semiconductor IC technologies like gallium nitride (GaN) and silicon carbide (SiC) are poised to grow rapidly, offering designers greater performance in a smaller package, making […]

Filed Under: Featured, MOSFETS Tagged With: diodesincorporated, efficientpowerconversion, epc, gansystems, infineon, ixys, pericomsemiconductor, powerex, texasinstrumentsinc

High-voltage MOSFETs target high-speed switch designs

August 22, 2016 By Aimee Kalnoskas Leave a Comment

Toshiba America Electronic Components, Inc.(TAEC)* today announced a new lineup of ultra-efficient, high-speed, high-voltage MOSFETs for switching voltage regulator designs. Available with 800V and 900V ratings, the four N-channel devices (TK4A80E, TK5A80E, TK3A90E, TK5A90E) are targeted to applications including flyback converters in LED lighting, supplementary power supplies and other circuits that require current switching below […]

Filed Under: MOSFETS Tagged With: taec, toshiba

Super-junction MOSFETs handle 1.5 kV in TO-220FP package

August 3, 2016 By Jennifer Calhoon Leave a Comment

MainMOSFETseriesTH

STMicroelectronics has introduced a portfolio of TO-220 FullPAK (TO-220FP) wide creepage power transistors, including the world’s first 1500V super-junction MOSFET in this new important arcing-resistant package. The TO-220FP wide creepage package is ideal for the power transistors of open-frame power supplies commonly used in equipment such as television sets and PCs, which are vulnerable to […]

Filed Under: MOSFETS

Top power electronics threads on EDAboard.com – July

August 1, 2016 By Aimee Kalnoskas Leave a Comment

(editor’s note: Intrigued by these power electronics problems? Have a question or optional solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the forum thread.) 12 V DC to 115 V AC sine wave inverter – I am making a 12 V DC to […]

Filed Under: AC-DC, Converters, DC-DC, Industry Experts, MOSFETS, Power Components Tagged With: edaboard, edaboard.com

Power module targets vehicular brushless-motor apps

July 27, 2016 By Aimee Kalnoskas Leave a Comment

ON Semiconductor has further expanded its portfolio of automotive Power Integrated Modules (PIMs) with the introduction of the STK984-190-E. Optimized for driving 3-phase brushless DC motors in modern automotive applications, this module contains six 40 V, 30 A MOSFETs configured as a three-phase bridge with an additional 40 V, 30 A high-side reverse battery protection […]

Filed Under: MOSFETS, Power Supplies, Three-phase Tagged With: onsemiconductor

Fast isolated gate driver for high-voltage applications handles 5.7 kVrms

July 19, 2016 By Aimee Kalnoskas Leave a Comment

Texas Instruments introduced the industry’s fastest 5.7-kVRMS isolated dual-channel gate driver, the first of a new gate driver family in TI’s isolation portfolio. The UCC21520’s flexible, universal compatibility enables its use as an isolated driver in low-side, high-side, high-side/low-side or half-bridge power management designs. With its integrated components, advanced protection features and optimized switching performance, […]

Filed Under: MOSFETS, Power Supplies Tagged With: texasinstrumentsinc, ti

Automatic decay scheme for stepper motor current regulation

July 12, 2016 By Aimee Kalnoskas Leave a Comment

by Rakesh Raja and Sudhir Nagaraj  || Closed-loop current regulation in stepper motors plays a major role in determining the accuracy and smoothness of motor motion. The scheme of current control also determines the power efficiency of the motor drive system. A typical pulse-width modulation (PWM) control loop used today has a suite of fixed-decay […]

Filed Under: Controllers, DC-DC, Featured, Industry Experts, MOSFETS, Power Management, Regulators Tagged With: texasinstrumentsinc, ti

Top power electronics threads on EDABoard.com – June

July 5, 2016 By Aimee Kalnoskas Leave a Comment

(editor’s note: Intrigued by the problem? Have a question or optional solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the forum thread.) Resistor mounting conditions for full power rating at 70degC ambient? – For the  PF2512FKF7W0R007L (7mΩ) 2512 SMT resistor, what is […]

Filed Under: AC-DC, Converters, DC-DC, Featured, Inductor, MOSFETS, Power Components, Resistors Tagged With: edaboard.com

SiC power MOSFET handles 225°C junction temperatures

June 22, 2016 By Aimee Kalnoskas Leave a Comment

TT Electronics, a global provider of engineered electronics for performance critical applications, today launched a Silicon Carbide (SiC) power MOSFET that is designed for high temperature, power efficiency applications with a maximum junction temperature of +225°C.  As a result of this operating potential, the package has a higher ambient temperature capability and can therefore be […]

Filed Under: MOSFETS, Transistors Tagged With: ttelectronics

SiC half-bridge power module/gate driver
brings low switching losses

May 17, 2016 By Abby Esposito Leave a Comment

WS136 CAS325M12HM2 Power Module PR

Wolf speed (A Cree Company), a global supplier of silicon carbide (SiC) power products, has introduced the first fully-qualified commercial power module from its Fayetteville, Arkansas location. The high-performance 62 mm module represents a new generation: SiC power modules that enable unprecedented efficiency and power density for high current power electronics, such as converters/inverters, motor […]

Filed Under: MOSFETS Tagged With: wolfspeed

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