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MOSFETS

N-channel Power MOSFETs sport efficient thermal design

March 3, 2016 By Jennifer Calhoon

STMth

The latest MDmesh™ DM2 N-channel Power MOSFET transistors from STMicroelectronics create new opportunities for power-supply designers to achieve greater efficiency in low-voltage power supplies for computers, telecom networks, industrial, and consumer devices. As people around the world acquire, store, and share a rapidly increasing amount of digital data such as e-books, videos, photographs, and music […]

Filed Under: MOSFETS Tagged With: stmicroeletronics

Multi-Phase 55-V Synchronous Boost Controllers Simplify target vehicular systems

March 1, 2016 By Andrew Zistler

IntersilTH

Intersil Corporation has announced two new 55V two-phase synchronous boost controllers with integrated high-side and low-side MOSFET drivers. The ISL78227 and ISL78229 are the industry’s most robust and highly integrated boost controllers available to simplify the design of high power automotive applications. Operating from a 12V battery supply, these devices boost the output voltage to […]

Filed Under: MOSFETS Tagged With: intersil

How and when MOSFETs blow up

February 26, 2016 By Lee Teschler

by Majeed Ahmad High temperatures and operating conditions outside the safe operating area can sabotage MOSFETs used in switching circuits. The MOSFET (metal-oxide-semiconductor field-effect transistor) is a primary component in power conversion and switching circuits for such applications as motor drives and switch-mode power supplies (SMPSs). MOSFETs boast a high input gate resistance while the […]

Filed Under: MOSFETS, Power Electronics Handbook Tagged With: onsemiconductor

SiC MOSFETs power high-frequency battery chargers

February 12, 2016 By Andrew Zistler

Wolfspeed, A Cree Company, announced today that Gruppo PBM, a leader in industrial battery chargers, is using Wolfspeed SiC MOSFETs in its new HF9 battery charger family to enable higher efficiency and power density at a lower overall system cost. Demand for safe, efficient, and fast-charging industrial batteries has increased exponentially along with the proliferation […]

Filed Under: MOSFETS Tagged With: wolfspeed

New 650V Ultra Junction X2-Class Power MOSFETs with Fast Body Diodes

February 10, 2016 By Andrew Zistler

rectifier diode

IXYS Corporation (NASDAQ: IXYS), a global manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, has announced an expansion of its Ultra Junction Power MOSFET product line: 650V X2-Class Power MOSFETs with fast body diodes. With on-resistance as low as 17 milliohms and current ratings […]

Filed Under: MOSFETS Tagged With: ixyscorporation

Top power electronics threads on EDAboard.com – December

January 1, 2016 By Aimee Kalnoskas

High voltage input cascaded input converter – We have to do a non-isolated SMPS for vin=120v to 400v, and vout = 100v, pout=300w. There is a “known” way to do this involving two cascaded synchronous buck stages. Do you know more detail of this “known” method? Read more Designing a charge controller for hybrid system – I […]

Filed Under: MOSFETS, Power Components, Power Management, Power Supplies Tagged With: edaboard.com

Teardown: 60-W-equivalent LED bulbs

December 4, 2015 By Lee Teschler

Feit-LED-bulb-small

by LELAND TESCHLER, Executive Editor Surprise: A look inside five LED bulbs designed to replace 60-W incandescents reveals design regimes ranging from dead simple to startlingly sophisticated. The average consumer might think that when it comes to light bulbs, one is about the same as another. This view might have been accurate back when every […]

Filed Under: Featured, LED Lighting, MOSFETS

Better converter efficiency with eGaN FETs

December 2, 2015 By Patrick Curran

plot-of-onresistance-versus-gate-voltage

by Alex Lidow and David Reusch, Efficient Power Conversion Corp. Gallium-nitride FET technology has improved markedly in the past five years. Power converters based on GaN FETs are living up to the promise of low power losses at an economical price. Enhancement-mode gallium-nitride (eGaN) FETs can switch at speeds ten times faster than the best […]

Filed Under: MOSFETS Tagged With: efficientpowerconversion

TI’s smart diode controller realizes the power of zero

November 18, 2015 By Aimee Kalnoskas

Industry’s first zero quiescent current solution for reverse polarity protection in industrial power tool and automotive applications Texas Instruments (TI) today introduced the industry’s first smart diode controller with zero quiescent current that provides better efficiency versus Schottky diodes and p-channel MOSFETs. The LM74610-Q1 provides lower power consumption and heat in a compact solution size, […]

Filed Under: MOSFETS

Driving LEDs with SiC MOSFETs

November 18, 2015 By Patrick Curran

220-W-two-stage-LED-driver

by ADAM BARKLEY, SiC Power Device Application Engineer, Wolfspeed, a Cree Company and VIPINDAS PALA, Research Scientist Wolfspeed, a Cree Company Engineers increasingly see the logic of silicon-carbide MOSFETs for handling a lot of electrical power, but new SiC devices also make sense for high-voltage switching. The benefits of silicon-carbide power MOSFETs are becoming widely […]

Filed Under: LED Lighting, MOSFETS, Power Electronics Handbook, Power Supplies

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Featured Contributions

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

GaN reliability milestones break through the silicon ceiling

Developing power architecture to support autonomous transportation

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