This section will discuss some of the many subtleties of the gate driver and its power source. Other gate-driver converter considerations Gate-driver dc-dc converters have other unique issues. Among them are: 1) Regulation: the load on the dc-dc converter is close to zero when the device is not switching. However, most conventional converters require a […]
drivers
Gate drivers — the critical link in power-device performance: part 2
Thus far, we have examined the general issue of power devices and their characteristics. This part goes into the details of the power-device gate driver. Gate-drive details To drive current into the gate, the positive rail’s voltage should be high enough to ensure full saturation/enhancement of the power switch, but without exceeding the absolute maximum […]
Motor drivers feature integrated charge pump for unlimited high-side MOSFET on-time in PWM applications
STMicroelectronics has introduced the STDRIVE102H and STDRIVE102BH, beginning a new generation of integrated gate drivers for three-phase brushless motors to boost performance, efficiency, and economy in consumer and industrial equipment. With an operating-voltage range of 6V to 50V, the STDRIVE102H for single-shunt control and STDRIVE102BH for three-shunt control are easily configured through two analog pins. […]
Integrated gate driver combines bootstrap diode and current limit resistor in 3×3 mm package
Littelfuse, Inc. has released the IXD0579M high-speed gate driver IC designed for driving N-channel MOSFETs or IGBTs in half-bridge configurations. The device operates across a 6.5 V to 18 V supply range and integrates both a bootstrap diode and a series current limit resistor into a single 3×3 mm² TDFN-10 package, reducing component count and simplifying PCB […]
4 mm x 5 mm gate drivers feature 2.4A sink capability for GaN applications
STMicroelectronics’ new high-voltage half-bridge gate drivers for GaN applications add extra flexibility and features for greater efficiency and robustness. The latest STDRIVEG610 and STDRIVEG611 give designers two options to manage GaN devices in power conversion and motion applications for greater efficiency, power density, and ruggedness in consumer and industrial applications. The STDRIVEG610 addresses applications requiring […]
Gate driver supports high-side switching up to a 200 V bootstrap operation
Littelfuse, Inc. has released the IXD2012NTR, a high-speed gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The device operates over a 10 V to 20 V voltage range and supports high-side switching up to 200 V in bootstrap operation, optimized for high-frequency power applications. The IXD2012NTR features logic inputs […]
Motor drive family delivers 4% efficiency gain over IGBTs in home appliances
Navitas Semiconductor has announced a new family of GaNSense Motor Drive ICs targeting home appliances and industrial drives up to 600 W. Specifically designed for motor drive applications, this fully integrated solution combines two GaN FETs in a half-bridge configuration with drive, control, sensing, and autonomous protection. Compared to legacy silicon IGBT solutions, this results […]
Surface-mount rectifiers feature 175 °C junction temperatures for EV applications
As surface-mount parts produced to meet AEC-Q101 automotive-grade standards, the HS1Q and SxY Series devices offer an intrinsically high-quality choice. They are ideal for bootstrap, freewheeling, and desaturating applications for IGBT, MOSFET, and WBG gate drivers used in electric vehicles and high-voltage battery systems. Other applications include alternative energy systems; grid-tied and smart grid systems; […]
AEC-Q100 LED IC features 600 mV dropout voltage
Nexperia introduced an AEC-Q100 qualified 12-channel, 40V high-side LED driver integrated circuit (IC) that complies with the ASIL-B level for designing functionally safe automotive lighting, including tail, brake, signal, and in-cabin illumination applications. This release addresses the market demand from automotive manufacturers for ICs that can help systems achieve ASIL-B compliance much earlier in the […]
High-speed isolated gate drivers optimized for bi-direction GaN control
Navitas Semiconductor has announced the latest breakthrough of the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed isolated gate drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from two-stage to single-stage topologies. Targeted applications range widely and open up multi-billion dollar market opportunities across EV charging […]
