Satellite communication systems use complex modulation schemes to achieve the blazingly fast data rates required to deliver video and broadband data. To attain this, they must deliver high RF output power while simultaneously ensuring the signals retain their desired characteristics. The new GMICP2731-10 GaN MMIC power amplifier announced by Microchip Technology Inc. helps meet both of these requirements.

 

The new device, Microchip’s first GaN MMIC, is designed for use in commercial and defense satellite communications, 5G networks, and other aerospace and defense systems.

 

The GMICP2731-10 is fabricated using GaN-on-Silicon Carbide (SiC) technology. It delivers up to 10W of saturated RF output power across the 3.5 GHz of bandwidth between 27.5 to 31 GHz. Its power-added efficiency is 20%, with 22 dB of small-signal gain and 15 dB of return loss. A balanced architecture allows the GMICP2731-10 to be well matched to 50-ohms and includes integrated DC blocking capacitors at the output to simplify design integration.

 

Microchip’s GMICP2731-10 complements the company’s existing portfolio of GaAs MMIC RF power amplifiers, switches, low-noise amplifiers, and Wi-Fi front-end modules, as well as a GaN-on-SiC High Electron Mobility Transistor (HEMT) driver and final amplifier transistors for radar systems.

 

Microchip provides board design support to help with design-ins, as do the company’s distribution partners. The company also provides compact models for the GMICP2731-10, which allow customers to model the performance and expedite the design of the power amplifier in their systems more easily.

 

The GMICP2731-10 is available today in volume production. For additional information, contact a Microchip sales representative or visit Microchip’s website. To purchase the GMICP2731-10, visit our purchasing portal or contact a Microchip authorized distributor.