• Skip to primary navigation
  • Skip to main content
  • Skip to primary sidebar
  • Skip to footer
  • Subscribe
  • Advertise

Power Electronic Tips

Power Electronic News, Editorial, Video and Resources

  • Products
    • Power Supplies
    • AC-DC
    • DC-DC
    • Battery Management
    • Capacitors
    • Magnetics
    • MOSFETS
    • Power Management
    • RF Power
    • Resistors
    • Transformers
    • Transistors
  • Applications
    • 5G
    • AI
    • Automotive
    • EV Engineering
    • LED Lighting
    • Industrial
    • IoT
    • Wireless
  • Learn
    • eBooks / Tech Tips
    • EE Training Days
    • FAQ
    • Learning Center
    • Tech Toolboxes
    • Webinars & Digital Events
  • Resources
    • Design Guide Library
    • Digital Issues
    • Engineering Diversity & Inclusion
    • LEAP Awards
    • Podcasts
    • White Papers
  • Video
    • EE Videos & Interviews
    • Teardown Videos
  • EE Forums
    • EDABoard.com
    • Electro-Tech-Online.com
  • Engineeering Training Days
  • Newsetter Subscription

High-efficiency 20-V N-channel MOSFET optimized for switching in small, thin devices

December 20, 2022 By Redding Traiger Leave a Comment

ROHM Semiconductor announced they have developed a compact, high-efficiency 20V N-channel MOSFET (RA1C030LD), optimized for switching in small, thin devices, including smartphones and wearables such as wireless earbuds and other hearable equipment.

In recent years, the increasing sophistication and power requirements of compact devices have resulted in larger batteries that reduce the space available for mounting components. At the same time, there is a limit to the size of the battery, so to ensure more efficient use of battery power the power loss of mounted components must be minimized.

To meet this need, the development of MOSFETs in wafer-level, chip-size packages (WLCSP) that contribute to greater miniaturization while maintaining the necessary characteristics is becoming mainstream in the industry. ROHM leverages its strengths as an IC manufacturer to significantly reduce wiring resistance, which has increased with conventional discrete processes. The result is a compact power MOSFET that delivers low power loss.

The RA1C030LD is offered in the DSN1006-3 wafer-level, chip-size package (1.0mm × 0.6mm) that takes advantage of ROHM’s proprietary IC process to achieve low power dissipation together with greater miniaturization. In terms of the figure of merit that expresses the relationship between conduction and switching losses (ON resistance × Qgd), an industry-leading value has been achieved that is 20% lower than standard package products in the same package (1.0mm × 0.6mm or smaller), contributing to a significantly smaller board area, along with higher efficiency in a variety of compact devices. At the same time, ROHM’s unique package structure provides insulated protection for the side walls (unlike standard products in the same package with no protection). This reduces the risk of short-circuit due to contact between components in compact devices that must resort to high-density mounting due to space constraints, contributing to safer operation.

Sales of the RA1C030LD launch December 2022.

You may also like:


  • Cars powered solely by solar energy? Sure…but with a very…

  • Selecting a gate driver for ASIL-certified systems

  • What’s the difference between an IGBT and an IGCT?

  • Private 5G: What is it? How does it work?

  • Power supply regulations, requirements, and standards

Filed Under: Applications, Consumer electronics, Development Tools, MOSFETS, Power Components, Switches, Wearables, wearables, Wireless Tagged With: rohmsemiconductor

Reader Interactions

Leave a Reply

You must be logged in to post a comment.

This site uses Akismet to reduce spam. Learn how your comment data is processed.

Primary Sidebar

Featured Contributions

Protecting Ethernet interfaces in telecommunications applications against common high energy surges

Ionic cooling: a silent revolution in thermal management

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

More Featured Contributions

EE LEARNING CENTER

EE Learning Center

EE TECH TOOLBOX

“ee
Tech Toolbox: Connectivity
AI and high-performance computing demand interconnects that can handle massive data throughput without bottlenecks. This Tech Toolbox explores the connector technologies enabling ML systems, from high-speed board-to-board and PCIe interfaces to in-package optical interconnects and twin-axial assemblies.

EE ENGINEERING TRAINING DAYS

engineering
“power
EXPAND YOUR KNOWLEDGE AND STAY CONNECTED
Get the latest info on technologies, tools and strategies for EE professionals.
“bills

RSS Current EDABoard.com discussions

RSS Current Electro-Tech-Online.com Discussions

  • Arduino standalone minimal
  • Math problem
  • Harman Kardon radio module BMW noise
  • CR2/CR123A Batteries In Projects
  • analog logic of shmidt trigger bjt circuit

Footer

EE World Online Network

  • 5G Technology World
  • EE World Online
  • Engineers Garage
  • Analog IC Tips
  • Battery Power Tips
  • Connector Tips
  • EDA Board Forums
  • Electro Tech Online Forums
  • EV Engineering
  • Microcontroller Tips
  • Sensor Tips
  • Test and Measurement Tips

Power Electronic Tips

  • Subscribe to our newsletter
  • Advertise with us
  • Contact us
  • About us

Copyright © 2026 · WTWH Media LLC and its licensors. All rights reserved.
The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media.

Privacy Policy