Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the […]
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GaN switch delivers bidirectional voltage blocking in single device
Infineon Technologies AG is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon’s robust gate injection transistor (GIT) technology to deliver a monolithic bidirectional switch, enabled by Infineon’s CoolGaN […]
Silicon carbide JFETs feature 2.3 mΩ resistance for 1200 V applications
Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable […]
SiP controller delivers up to 60 W power with universal 85 V – 305 V AC input range
Infineon Technologies AG is launching its new CoolSET System in Package (SiP), a compact, fully integrated system power controller for highly efficient power delivery of up to 60 W at universal input voltage range of 85 – 305 V AC. Housed in a small SMD package, the high-voltage MOSFET with low R DS(ON) eliminates the need for […]
GaN power module reduces thermal resistance through .XT technology
Infineon Technologies AG is introducing the EasyPACK CoolGaN Transistor 650 V module, adding to its growing GaN power portfolio. Based on the Easy Power Module platform, the module has been specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging stations. It is designed to meet the growing […]
Automotive IGBT chips feature 185 °C maximum junction temperature
Infineon Technologies AG is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products. Among these offerings are the EDT3 (Electric Drive Train, 3rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance […]
GaN transistors add Schottky diodes to boost converter efficiency
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the […]
100V 1.5 mΩ GaN transistor features built-in Schottky diode in 3 x 5 mm package
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the […]
48 V switches feature ±5% current sense accuracy
As vehicle architectures transition to hybrid and electric models, conventional battery systems are increasingly being supplemented or replaced by 48 V power sources. This shift is expected to become the new standard for future electric vehicles, as 12 V and 24 V power net systems reach their limits. 48 V systems enable advanced features, enhance […]
Hybrid flyback controllers reduce transformer size via lower leakage inductance
Infineon Technologies AG is introducing the E-version of its hybrid flyback controller family. Designed for high-performance applications, the new XDP hybrid flyback digital controller family leverages the advanced asymmetrical half-bridge (AHB) topology, which combines the simplicity of a flyback converter with the efficiency of a resonant converter, enabling high power density designs. This makes the […]
