The VN9D30Q100F and VN9D5D20FN from STMicroelectronics introduce a new generation of automotive intelligent switches, the first in the market with digital current sensing among the fully digital on-chip diagnostic features. Designed for high-side connection in applications powered from a 12V battery, the drivers simplify the hardware and software design of electronic control units (ECUs) and […]
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Single-chip driver handles high frequency switching of GaN enhancement-mode FETs
STMicroelectronics’ STDRIVEG600 half-bridge gate driver has a high current output and 45ns propagation delay, closely matched between high-side and low-side outputs, to handle high-frequency switching of GaN enhancement-mode FETs. Also suitable for driving N-channel silicon MOSFETs at up to 20V, the STDRIVEG600 allows the flexibility to apply up to 6V gate-source voltage (VGS) on GaN […]
LDMOS power transistors optimized for RF power amplifiers
STMicroelectronics is adding a broad range of new devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimized for RF power amplifiers (PAs) in a variety of commercial and industrial applications. Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a […]
Isolated buck converters boast wide input voltage range of 4 V to 48 V
Optimized for isolated buck regulator designs, the STMicroelectronics A6986I and L6986I DC/DC converter ICs have a wide input-voltage range and low quiescent current to ensure robust and energy-efficient operation in automotive and industrial applications up to 5W. The isolated buck topology drastically lowers the bill of materials in systems that require a regulated non-isolated primary voltage and one […]
Isolated gate driver safely controls SiC MOSFETs
Joining STMicroelectronics’ STGAP family of isolated gate drivers, the STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a high-voltage rail up to 1200V. Capable of producing a gate-driving voltage up to 26V, the STGAP2SiCS has a raised Under-Voltage Lockout (UVLO) threshold of 15.5V to meet the turn-on requirements of SiC […]
High-voltage bi-directional current-sense amplifiers boost power efficiency
STMicroelectronics has introduced three precision high-voltage bi-directional current-sense amplifiers that provide the extra convenience of a Shutdown pin to maximize energy savings. The TSC2010, TSC2011, and TSC2012 amplifiers also allow designers to minimize power dissipation by leveraging their precision characteristics to select low sense-resistor values. The offset voltage is within ±200µV at 25°C, with less than 5µV/°C drift, […]
USB Type-C power delivery 3.0 reference design features PPS support
STMicroelectronics has revealed a USB Type-C Power Delivery 3.0 reference design with Programmable Power Supply (PPS) support to accelerate the design of easy-to-use, compact, and efficient power adapters up to 27W with the zero-power operation when no cable is connected. USB PPS helps to save power, and reduce device-charging times and heat dissipation, contributing also to cut […]
Energy-meter eval board combines low-cost sensors and galvanic isolation
A new evaluation board from STMicroelectronics speeds design of 3-phase AC Watt meters that meet the most stringent international quality and accuracy standards using low-cost, electromagnetic-immune shunt sensors and advanced galvanic-isolation technology for superior reliability and robustness. The EVALSTPM-3PHISO evaluation board combines the high-accuracy STPMS2 metering front-end IC and the advanced STISO621 digital isolator, with customizable turn-key firmware […]
SiPs combine two GaN HEMTs, high-voltage gate drivers
Building upon the advantages of STMicroelectronics’ MasterGaN platform, MasterGaN2 is the first in the new family to contain two asymmetric gallium-nitride (GaN) transistors, delivering an integrated GaN solution suited to soft-switching and active-rectification converter topologies. The 650V normally-off GaN transistors have on-resistance (RDS(on)) of 150mΩ and 225mΩ. Each is combined with an optimized gate driver, making GaN […]
High-temperature snubberless triacs reduce heat sink needs
STMicroelectronics’ 800V 8H Triacs operate at full rated current up to the maximum junction temperature of 150°C, allowing heatsinks in drives for AC loads to be up to 50% smaller to combine compact dimensions with high reliability. Suited to industrial, personal care, smart-home, and smart-building applications, the new Triacs leverage ST’s latest Snubberless high-temperature technology […]
