Efficient Power Conversion Corporation (EPC) introduces the EPC91118, the first commercially available reference design to integrate gallium nitride (GaN) IC technology for humanoid robot motor joints. Optimized for space-constrained and weight-sensitive applications such as humanoid limbs and compact drone propulsion, the EPC91118 delivers up to 15 ARMS per phase from a 15 V to 55 […]
Motors and motor control
Power resistors dissipate 300 W with heatsink
Bourns, Inc. announced a new thick film resistor series that delivers high heat tolerance in a compact TO-227 package. The Riedon PF2270 Series Power Film Resistors by Bourns are engineered to provide superior power dissipation based on their thick film technology design and excellent pulse handling capabilities that offer up to 300 W of power dissipation with […]
EMIS releases three phase EMI filter rated for 520 VAC and 600 A current handling
EMIS announces the availability of the TMF4233 Three Phase EMI Filter with Neutral designed to be used in systems where noise may arise not just from phase wires but also from the neutral line, improving overall noise suppression. This series is primarily used in industrial equipment, machinery, machine tools, and various process automation systems with […]
Integrated gate driver combines bootstrap diode and current limit resistor in 3×3 mm package
Littelfuse, Inc. has released the IXD0579M high-speed gate driver IC designed for driving N-channel MOSFETs or IGBTs in half-bridge configurations. The device operates across a 6.5 V to 18 V supply range and integrates both a bootstrap diode and a series current limit resistor into a single 3×3 mm² TDFN-10 package, reducing component count and simplifying PCB […]
Gate drive transformers provide galvanic isolation for IGBT and MOSFET control
ITG Electronics has introduced a new series of gate drive transformers comprising a range of products for various needs. The company’s T201213 Series of Gate Drive Transformers spans lower-current items for general applications, such as a 200 volts direct current (VDC) version, to products offering up to 450VDC for high-voltage applications. Gate drive transformers are specialized pulse […]
GaN switch delivers bidirectional voltage blocking in single device
Infineon Technologies AG is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon’s robust gate injection transistor (GIT) technology to deliver a monolithic bidirectional switch, enabled by Infineon’s CoolGaN […]
SiC MOSFETs feature 6.45 mm creepage in HV-T2Pak package for 1200 V applications
Navitas Semiconductor introduces a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2Pak top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications […]
Reference design supports 48 V, 72 V, and 96 V light EV applications
Arrow Electronics, in collaboration with Vishay eMobility, today announced the launch of a low-voltage traction inverter reference design tailored for light electric vehicles (LEVs). This reference design addresses the growing demand for sustainable, energy-efficient urban transportation solutions such as e-bikes, e-scooters, and compact commercial and agricultural vehicles. Built on NXP’s S32K3xx MCU platform and Vishay’s […]
Motor drive family delivers 4% efficiency gain over IGBTs in home appliances
Navitas Semiconductor has announced a new family of GaNSense Motor Drive ICs targeting home appliances and industrial drives up to 600 W. Specifically designed for motor drive applications, this fully integrated solution combines two GaN FETs in a half-bridge configuration with drive, control, sensing, and autonomous protection. Compared to legacy silicon IGBT solutions, this results […]
GaN transistors add Schottky diodes to boost converter efficiency
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the […]
