Navitas Semiconductor, El Segundo, Calif., has won an honorable mention in the recently concluded 2022 Leap Awards for product innovation. The LEAP Awards celebrates the most innovative and forward-thinking products serving the design engineering space. Navitas won in the power electronics category which covers power supplies, transistors and any other power electronic circuits, components or […]
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GaN half-bridge power ICs enable megahertz-range switching frequencies
Navitas Semiconductor announced the industry’s first GaNSense half-bridge power ICs. These half-bridge ICs enable a new level of MHz switching frequencies while dramatically reducing the system cost and complexity compared to existing discrete solutions. GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental […]
High-power 650/800 V-rated GaN modules feature low on resistance, high efficiency
Navitas Semiconductor has announced the NV6169, a new high-power 650/800 V-rated GaNFast power IC with GaNSense technology to address higher-power applications such as 400-1000 W 4K/8K TVs and displays, next-generation gaming systems, 500 W solar microinverters, 1.2 kW data-center SMPS, and up to 4 kW / 5 hp motor drives. GaN is a next-generation power […]
Power FET/driver/logic-input ICs operate at 700 V
Navitas Semiconductor announced that its GaNFast power ICs with GaNSense technology has been upgraded to increase efficiency, power density, and access to additional fast-charger markets. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power, 40% energy savings, and 3x faster charging in […]
GaN power ICs handle 2 kW to 20 kW apps
Navitas Semiconductor announced that high-power GaN power IC samples are now available for the first time to data center, solar and electric vehicle (EV) customers worldwide. Navitas GaNFast ICs have first introduced to mobile customers three years ago and have become a mainstream, disruptive force in those markets, enabling unprecedented high-efficiency and ultra-fast charging of […]
GaN power ICs incorporate temperature and current sensing
Navitas Semiconductor has announced the launch of GaNFast power ICs with GaNSense technology. GaNSense technology integrates critical, real-time, autonomous sensing and protection circuits which further improves Navitas’ industry-leading reliability and robustness while increasing the energy savings and fast-charging benefits of Navitas’ GaN IC technology. Gallium nitride (GaN) is a next-generation semiconductor technology that runs […]
High-power 650V/800V GaN ICs combine power FET and gate driver
Navitas Semiconductor announced the NV6128, a new high-power 650V/800V-rated GaNFast power IC to address the high-power mobile and consumer power electronics market and take market share from the old, slow, silicon chip. The 70 mOhm NV6128 represents a 66% increase in current capability, in a small, 6 x 8 mm PQFN package with a proprietary, […]
65W USB-PD (Type C) adapter reference design for GaN power ICs
Navitas Semiconductor announced what they say is the world’s smallest 65W USB-PD (Type C) adapter reference design, to keep pace with the dramatic size and weight reductions in laptop designs over the last 10 years. High-frequency, high-efficiency AllGaN Power ICs are used to deliver 65W in only 45cc / 2.7in3 and only 60g in weight by minimizing […]
Production-qualified GaN power ICs offer 650V, 160mΩ power FET
Navitas Semiconductor announced the immediate availability of production qualified iDrive™ Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN™ technology. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing integration of digital and analog circuits, leading to high speed, energy efficiency, power density and reduced system cost. GaN can […]
GaN power ICs integrate FETs with drive circuits for fast switching
Navitas Semiconductor has announced the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN monolithically-integrated 650V platform. Combining GaN power FETs with GaN logic and drive circuits enables 10x-100x higher switching frequency than existing silicon circuits, making power electronics smaller, lighter and lower cost. A new generation of high frequency, energy efficient converters […]
