The 800 V–6 V DC-DC power delivery board from Navitas Semiconductor is a GaNFast™-based power conversion platform designed for AI data center and compute server power architectures. The board enables direct conversion from 800 V to 6 V in a single stage, eliminating the 48 V intermediate bus converter, and is designed to reach 96.5% […]
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800 V to 50 V DC-DC platform switches at 1 MHz
The 10 kW DC-DC power platform from Navitas Semiconductor is an all-GaN design using GaNFast™ 650 V and 100 V FETs in a three-level half-bridge with synchronous rectification, delivering 98.5% peak efficiency and 98.1% full-load efficiency at up to 1 MHz switching frequency. Housed in a 61 × 116 × 11 mm full-brick package, the […]
3300 V and 2300 V SiC MOSFETs add TAP structure
Navitas Semiconductor has released sample units of its new 3300 V and 2300 V ultra-high-voltage silicon carbide (SiC) MOSFETs, available in power-module formats, discrete packages, and known-good-die (KGD) options. The devices are based on the fourth-generation GeneSiC platform using a Trench-Assisted Planar (TAP) structure that improves electric-field distribution compared to conventional trench or planar MOSFETs. […]
Data center PSU integrates Gen-3 SiC MOSFETs with 3-phase interleaved topology
Navitas Semiconductor has announced its latest 12 kW power supply unit (PSU), designed for production, reference design for hyperscale AI data centers with high-power rack densities of 120 kW. The 12 kW PSU complies with Open Rack v3 (ORv3) specifications and Open Compute Project (OCP) guidelines. It utilizes Gen-3 Fast SiC MOSFETs, a novel ‘IntelliWeave’ digital platform, and high-power […]
SiC MOSFETs feature 6.45 mm creepage in HV-T2Pak package for 1200 V applications
Navitas Semiconductor introduces a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2Pak top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications […]
Motor drive family delivers 4% efficiency gain over IGBTs in home appliances
Navitas Semiconductor has announced a new family of GaNSense Motor Drive ICs targeting home appliances and industrial drives up to 600 W. Specifically designed for motor drive applications, this fully integrated solution combines two GaN FETs in a half-bridge configuration with drive, control, sensing, and autonomous protection. Compared to legacy silicon IGBT solutions, this results […]
High-speed isolated gate drivers optimized for bi-direction GaN control
Navitas Semiconductor has announced the latest breakthrough of the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed isolated gate drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from two-stage to single-stage topologies. Targeted applications range widely and open up multi-billion dollar market opportunities across EV charging […]
Wide bandgap power devices from industrial motors to 8.5 kW data center systems
Navitas Seminconductor is demonstrating new gallium nitride (GaN) and silicon carbide (SiC) power semiconductor technologies at electronica 2024, focusing on applications in AI data centers, electric vehicles, renewable energy, and industrial systems. A new 8.5 kW power supply for AI and hyperscale data centers combines GaN power ICs with third-generation SiC MOSFETs. The SiC components, […]
8.5 kW PSU achieves 98% efficiency for AI and data centers
Navitas Semiconductor has released an 8.5 kW power supply unit (PSU) that utilizes GaN and SiC technologies and has achieved 98% efficiency for AI and hyperscale data centers. The AI-optimized 54V output PSU meets Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. It incorporates GaNSafe and Gen-3 Fast SiC MOSFETs in 3-phase interleaved […]
700 V chip features 120 mΩ rating in DPAK-4L package
Navitas Semiconductor has announced GaNSlim, a new generation of highly integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. GaNSlim enables the simplest, fastest, and smallest system design by integrating drive, control, and protection, with integrated […]
