Zuken announces the launch of the eCADSTAR release 2021.0. With this release, the eCADSTAR 3D PCB design has been extended to include numerous new features, including 3D creepage safety checks in the PCB design editor, improved bus management, and sheet connector cross-references in the schematic editor, and enhanced scripting in the COM interface. The new […]
Development Tools
Miniature low-ohm shunt resistors handle 10 W
ROHM Semiconductor announced the development of the GMR320 series of shunt resistors featuring a rated power of 10W, the largest in the high-power, low-ohmic GMR lineup designed for high-power applications in the automotive, industrial equipment, and home appliance sectors. Recent years have seen an increasing demand in the automotive and industrial fields for higher power applications that consume less power. […]
Power modules combine 600-V GaN switches with gate drivers
Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies AG adds the new CoolGaN IPS family of integrated power stage (IPS) products to its broad portfolio of WBG power devices. The initial […]
Reference design details GaN-based 3-kW LLC resonant converter
GaN Systems introduced a new reference design for a high density, high efficiency GaN-based 3kW LLC Resonant Converter (GS-EVB-LLC-3KW-GS) aimed to reduce design cycles, costs, and time to market for companies developing data center, telecom, and industrial switching mode power supply (SMPS) applications. The full-bridge LLC resonant converter design, integrating GaN Systems’ 650 V E-mode transistors, exceeds the […]
Demo board powers 400-W BLDC motors with GaN
EPC announces the availability of the EPC9146, a 400 W motor drive demonstration. The EPC9146 power board contains three independently controlled half-bridge circuits, featuring the EPC2152 monolithic ePower Stage with integrated gate driver, 80 V maximum device voltage, 15 A (10 ARMS) maximum output current. The inverter board measures just 81 mm x 75 mm […]
Hybrid flyback controller optimized for USB chargers/adapters
Rapid technology and market developments in the fast charger and adapter market continuously challenge designers of power supply systems. To meet the increasing demand for higher power density and energy efficiency, Infineon Technologies AG expands its XDP family by adding the first application-specific standard product based on an asymmetric half-bridge flyback topology. Available in a […]
Automotive power modules based on SiC MOSFETs
Infineon Technologies AG introduced a new automotive power module with CoolSiC MOSFET technology. At this year’s virtual PCIM trade show, Infineon will present the new HybridPACK Drive CoolSiC, a full-bridge module with 1200 V blocking voltage optimized for traction inverters in electric vehicles (EV). The power module is based on the automotive CoolSiC trench MOSFET […]
Compact gate drivers integrate a two-level slew rate control
The highest efficiency is a key requirement for today’s power electronics. Therefore, Infineon Technologies AG introduces its latest isolated EiceDRIVER 2L-SRC Compact (1ED32xx) gate driver family in a compact form factor. The gate driver family comes in an 8 mm wide-body package to ensure easy design-in and integrates a two-level slew rate control, which significantly […]
Power rectifier handle 8-A current, feature 35 nsec reverse recovery time
SSDI has released the new SDR8400 series of high-density rectifiers. With similar dimensions as the 1N6627, the SDR8400 delivers 8 amps, which is more than three times the output current of the 1N6627. The SDR8300 – SDR8400 series also features a voltage range of 300 – 400 volts, low forward voltage drop of 1.02 V, high […]
SiC 1.2-kV MOSFET power modules target high-power-density apps
Infineon Technologies AG has upgraded the EasyDUAL CoolSiC MOSFET modules with a new aluminum nitride (AIN) ceramic. The devices come in a half-bridge configuration with an on-state resistance (RDS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. With high-performance ceramic, the 1200 V devices are suitable for […]