Magnachip Semiconductor Corporation announced that the company had launched its eighth-generation 150V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)1 optimized for Light Electric Vehicle (LEV) motor controllers and battery management systems (BMSs). Energy efficiency plays a critical role in electric devices regarding power consumption and product stability. This newly-released MOSFET (MDT15N054PTRH) features Magnachip’s eighth-generation trench MOSFET technology […]
Motors and motor control
GaN FETs feature low on resistance with 150/200-V ratings
EPC introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with an exposed top and tiny 3 mm x 5 mm footprint. These devices are the lowest on-resistance (RDS(on)) FETs in the market at 150 V and 200 V in a size that […]
eGaN power FETs feature high power density, tiny footprint
EPC launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products. The EPC2619 has an RDS(on) of just 4 mOhms in a tiny, 1.5 mm x 2.5 mm, footprint. The maximum RDS(on) x Area of […]
SiC MOSFETs target automotive, industrial uses
Alpha and Omega Semiconductor Limited announced its new industry-leading 650V and 750V SiC MOSFET platform for both industrial and automotive applications. The 650V SiC MOSFETs are ideal switching solutions for industrial applications such as solar inverters, motor drives, industrial power supplies, and new energy storage systems, while the AEC-Q101 qualified 750V SiC MOSFET line is targeted […]
Speedy TMR front-end IC handles demanding EV motor control apps
TDK Corporation complements the existing TMR sensor portfolio with the new Micronas signal-conditioning integrated circuit (IC) ASA 2310 for high-speed automotive and industrial electric motor applications. ASA 2310 is a low-drift, low-noise, customer-programmable TMR front-end IC with differential or single-ended SIN/COS inputs and analog outputs. Samples of ASA 2310 are now available. The start of […]
IGBT-based power modules target 3-phase motor control, medium-power VFDs
Infineon Technologies AG has launched the IM523 series of the CIPOS Mini family. The highly efficient IPMs (intelligent power modules) are based on the new 600 V Reverse Conducting Drive 2 (RCD2) IGBT technology and come with an open emitter. The CIPOS IM523 series enables the integration of various power and control components to increase […]
GaN 3-phase BLDC motor drive delivers 20 A
EPC announces the availability of the EPC9176, a 3-phase BLDC motor drive inverter using the EPC23102 ePower Stage GaN IC with embedded gate driver function and two GaN FET with 5.2 mΩ typical RDS(on). The EPC9176 operates from an input supply voltage between 20 V and 80 V and can deliver up to 28 Apk […]
Integrated ac-dc power stages handle up to 950 V
Optimized performance, efficiency, and reliability in high-voltage power supplies need to be combined with reduced bill-of-material (BOM) count and cost, as well as lower design efforts. With its 5 th generation fixed-frequency (FF) CoolSET portfolio, Infineon Technologies AG offers the right components to meet these needs and effectively manage the critical design trade-offs. The new 800 V and 950 V […]
Rugged ac filter capacitors target motor drive, UPS, PV inverter apps
TDK Corporation has added the B32354S* series to its portfolio of metalized EPCOS polypropylene (MKP) capacitors for filter applications. The new devices, which feature a 4-pin design and a pitch of 52.5 mm, are rated for VRMS of 275 V AC or 350 V AC and cover a capacitance range from 10 μF to 40 μF. […]
GaN half-bridge power ICs enable megahertz-range switching frequencies
Navitas Semiconductor announced the industry’s first GaNSense half-bridge power ICs. These half-bridge ICs enable a new level of MHz switching frequencies while dramatically reducing the system cost and complexity compared to existing discrete solutions. GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental […]
