Littelfuse, Inc., the global leader in circuit protection, today introduced the MG12600WB-BR2MM Series, the latest addition to its IGBT Module Power Semiconductor portfolio. The new 1200V, 600A Half-Bridge IGBT Module Series offers designers a substantially higher current rating than the portfolio’s previous maximum current rating (450A), offering the high efficiency and fast switching speeds of […]
Transistors
GaN Systems, e2v Inc. ink supply agreement
A master supply agreement between e2v, the global leader in the high reliability (hi-rel) semiconductor market, and GaN Systems, the leading manufacturer of gallium nitride power transistors, establishes e2v as the global supplier of GaN Systems’ 100V and 650V hi-rel GaN transistor products and customer care for the A&D market. e2v will utilize its infrastructure […]
GaN HEMT targets C-Band radar systems.
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, announces their complete lineup of high efficiency, high gain, and wide bandwidth C-Band radar parts with the market introduction of the new CGHV59070 GaN HEMT for C-Band radar systems. Designed […]
N-channel MOSFET handles 100 V/160 A in automotive applications
Toshiba America Electronic Components, Inc. (TAEC) today announced the expansion of its lineup of automotive N-channel power MOSFETs with the addition of a new 100V, 160A device: the TK160F10N1L. Offering low on-resistance and a low voltage drive as well as a narrowed gate threshold voltage, the TK160F10N1L keeps current balances in parallel operation in large-current applications […]
Isolated gate drivers incorporate protection for HV IGBTs
Silicon Labs has expanded its ISOdriver portfolio with a family of isolated gate drivers designed to protect sensitive insulated-gate bipolar transistor (IGBT) switches in power inverter and motor drive applications. The new Si828x ISOdriver family provides industrial-grade isolation (5 kVrms withstand), best-in-class feature integration including an optional dc-dc converter, the industry’s fastest desaturation detection, superior timing […]
Littelfuse to Acquire TVS diode/IGBT/thyristor Portfolio From ON Semiconductor
Littelfuse, Inc., today announced it has entered into definitive agreements to acquire the product portfolio of transient voltage suppression (“TVS”) diodes, switching thyristors and insulated gate bipolar transistors (“IGBT”) for automotive ignition applications from ON Semiconductor Corporation for a combined purchase price of $104 million. This portfolio has annualized sales of approximately $55 million. The […]
Low-capacitance TVS diode Arrays work as common-mode filters
Littelfuse has introduced a series of low capacitance TVS Diode Arrays optimized for protecting electronic equipment that may experience destructive electrostatic discharges (ESDs). SP814x Series TVS Diode Arrays (SPA® Diodes) integrate four or six channels of ultra-low-capacitance rail-to-rail diodes and an additional zener diode to safely absorb repetitive ESD strikes above the maximum level specified […]
SiC MOSFETs feature 1.7 kV breakdown voltage
ROHM has recently announced the availability of a new 1700V SiC MOSFET optimized for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters. In recent years, the growing trend to conserve energy in all areas has increased the demand for energy-saving power semiconductors, particularly for applications in the industrial sector such as general-purpose inverters and […]
SiC power MOSFET handles 225°C junction temperatures
TT Electronics, a global provider of engineered electronics for performance critical applications, today launched a Silicon Carbide (SiC) power MOSFET that is designed for high temperature, power efficiency applications with a maximum junction temperature of +225°C. As a result of this operating potential, the package has a higher ambient temperature capability and can therefore be […]
GaN power devices get wider distribution
Richardson RFPD, Inc. announced an agreement with GaN Systems Inc. Under the terms of the agreement, Richardson RFPD will sell GaN Systems’ GaN on Si power devices on a global basis, excluding Israel. GaN Systems manufactures a range of gallium nitride high-power transistors for consumer, enterprise, industrial, solar/wind/smartgrid, and transportation power-conversion applications. “GaN Systems adds […]
