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Transistors

1.2-kV SiC diodes handle 2 to 40 A

May 11, 2017 By Aimee Kalnoskas Leave a Comment

A full range of 2A-40A 1200V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes from STMicroelectronics enables a wider range of applications to benefit from the high switching efficiency, fast recovery, and consistent temperature characteristics of SiC technology. ST’s SiC-diode manufacturing process creates extremely robust devices with the best-in-class forward voltage (lowest VF), giving circuit designers […]

Filed Under: Transistors

GaN transistors maximize power efficiency, reduce size in solar power inverter

April 26, 2017 By Aimee Kalnoskas 1 Comment

GaN Systems’ gallium nitride (GaN) transistors are being used by power inverter design engineers to increase power efficiency, and to reduce inverter size and weight. These performance advantages have compelled SolPad™, designer of state-of-the-art sustainable personalized energy systems that integrate solar power conversion with battery storage, to use GaN Systems’ 650V GaN transistors in their […]

Filed Under: Power Supply News, Transistors Tagged With: gansystems, solpad

High-efficiency, fast-switching GaN FET earns AEC-Q101 qualification

March 27, 2017 By Aimee Kalnoskas Leave a Comment

Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry’s first GaN solution to earn automotive qualification—having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. Transphorm’s automotive GaN FET, the TPH3205WSBQA, offers an on-resistance of 49 milliOhms (mΩ) in an industry standard TO-247 […]

Filed Under: Transistors Tagged With: transphorm

2.0A, 2.5A and 3.0A power switches optimized for USB port protection

March 21, 2017 By Aimee Kalnoskas Leave a Comment

Featuring an ultra-low on resistance to reduce power losses, the AP22811 and AP22804/AP22814 power switches introduced by Diodes Incorporated are optimized for universal serial bus (USB) and other hot-swap applications. Supporting load currents of 2.0A, 2.5A and 3.0A, respectively, this family of devices protects USB ports against over-current, short-circuit and over-temperature conditions and prevents system […]

Filed Under: Power Components, Transistors Tagged With: diodesinc

Tiny 2.6-A BDC motor driver targets portable, battery-powered IoT devices

March 21, 2017 By Aimee Kalnoskas Leave a Comment

The STSPIN250 single-chip 2.6A driver for brushed DC motors extends STMicroelectronics’ family of miniature, low-voltage, energy-efficient drivers for battery-powered portable and wearable applications. The driver integrates a full power-MOSFET bridge and fixed off-time PWM current controller in a tiny 3mm x 3mm package that saves space in portable equipment. The low on-resistance of the power […]

Filed Under: IoT, Transistors Tagged With: st, stmicroeletronics

Auto-compliant transient voltage suppressor dissipates 1800W of power

March 15, 2017 By Aimee Kalnoskas Leave a Comment

The D28V0H1U2P5Q unidirectional 1800W automotive-compliant transient voltage suppressor (TVS) by Diodes Incorporated is designed to protect sensitive electronic circuits from transients generated by inductive switching and targets a wide range of automotive applications, including pumps, HVAC (heating, ventilation & air-conditioning), infotainment, navigation, and Advanced Driver Assistance Systems (ADAS). Packaged in the thermally efficient PowerDI®5 package, […]

Filed Under: Transistors

eGaN FETs now 15x smaller than silicon equivalents

March 15, 2017 By Aimee Kalnoskas Leave a Comment

Efficient Power Conversion Corp. advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ , 100 V) and the EPC2047 (10 mΩ , 200 V) eGaN FETs.   Widening the performance/cost gap with equivalent silicon power transistors, the EPC2045, cuts the die size in […]

Filed Under: MOSFETS, Transistors Tagged With: efficientpowerconversion, epc

High power density IGBT modules target motor drives, inverters

March 14, 2017 By Aimee Kalnoskas Leave a Comment

Infineon Technologies AG is expanding its offering of 62 mm IGBT modules. The new power modules serve the growing demand for higher power density without increasing package size. This is realized by a larger chip area and an adapted DCB substrate in the proven 62 mm package. Typical applications for modules with 1200 V blocking […]

Filed Under: Transistors Tagged With: infineon

Integrated power switches handle 1 to 4 A

March 8, 2017 By Aimee Kalnoskas Leave a Comment

Silego Technology announced today an extension of its performance-driven GFET3 Integrated Power Switch (IPS) portfolio. Addressing extremely PCB-space-constrained, high-performance applications in tablet PC, smartphones and fitness band markets, these three new WLCSP products cover high-side power control applications from 1 A to 4 A. For smartphone and fitness band applications, the 0.64 mm2 (0.8 mm x […]

Filed Under: Transistors, Wireless Tagged With: silegotechnology

Power modules lessen the load on internal combustion engines

March 3, 2017 By Lee Teschler 1 Comment

DBC

Integrated smart power modules will run mechanical loads that would otherwise sap fuel mileage. THOMAS YIM | ON SEMICONDUCTOR GOVERNMENT REGULATIONS are stimulating demands for more economical vehicles that produce not just fewer NOx pollutants, but also less CO2. Vehicle tax policies currently favor less polluting models, and car makers must cope with new legislation […]

Filed Under: Power Components, Power Electronics Handbook, Semiconductor, Transistors Tagged With: DBC, FAM65V05DF1, HVIC, IGBT, LVIC, ON semiconductor, power semiconductor

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