STMicroelectronics is adding a broad range of new devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimized for RF power amplifiers (PAs) in a variety of commercial and industrial applications. Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a […]
Telecommunications
Rad-hard PoL buck regulator, digital isolators, 100-V GaN FETs target satellite apps
Renesas Electronics Corporation launched a new line of plastic-packaged radiation-hardened (rad-hard) devices for satellite power management systems. The four new devices include the ISL71001SLHM/SEHM point of load (POL) buck regulator, ISL71610SLHM, and ISL71710SLHM digital isolators, and the ISL73033SLHM 100V GaN FET and integrated low-side driver. Combining rad-hard assurance levels with the board area savings and […]
Reed relays feature long life, rugged construction
Teledyne Relays announced the availability of four new reed relay product families, all offering extremely long life of up to 1 billion cycles, ideal for applications where high reliability is essential. The new product lines complement the already broad array of rugged switching solutions the company has been supplying for more than 60 years. Reed relays […]
Industrial battery charging module includes 500-W dc-dc converter
Delta-Q Technologies introduced a new line of battery charging solutions with the launch of the XV3300. Its unique design combines a high-performance 3.3kW charger, a 500W DC-DC converter, and an EV charging station interface in a highly compact package. The XV3300 is the ideal solution for power-train electrification. The 3.3kW charger will be available in […]
Dual power rail I2C bus GPIO expanders are automotive-compliant
Diodes Incorporated has announced 16-bit PI4IOE5V6416Q and 34-bit PI4IOE5V6534Q bidirectional voltage-level translation general-purpose I/O (GPIO) expanders for automotive applications. Representing an industry first for the automotive industry, the automotive-compliant, AEC-Q100 Grade 2 qualified devices with dual voltage rail provide enhanced programmable I/O for next-generation low voltage microprocessors and microcontrollers via the I2C interface. As part of Diodes’ ongoing […]
48-to-12-V LLC converter handles 1 kW
EPC announces the availability of the EPC9149, a 1 kW-capable 48 V input to 12 V output LLC converter that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40 V EPC2024 GaN FETs. The board is the size of DOSA-standard ⅛th brick format, measuring […]
30 V, N-channel MOSFET offers RDS(ON) down to 0.95 mΩ
Vishay Intertechnology, Inc. introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 mΩ at 10 […]
Reference design details GaN-based 3-kW LLC resonant converter
GaN Systems introduced a new reference design for a high density, high efficiency GaN-based 3kW LLC Resonant Converter (GS-EVB-LLC-3KW-GS) aimed to reduce design cycles, costs, and time to market for companies developing data center, telecom, and industrial switching mode power supply (SMPS) applications. The full-bridge LLC resonant converter design, integrating GaN Systems’ 650 V E-mode transistors, exceeds the […]
PoL regulators provided in compact 33 x 8.5 x 19 mm SIP package
Flex Power Modules introduces the BMR474, a high power density, digital non-isolated Point of Load (PoL) regulator. Due to its vertically mounted SIP (Single Inline Package) design, the BMR474 saves valuable board space, while being able to deliver up to 80 A output current, with a maximum power output of 198 W. Designed for telecom […]
650 V GaN FETs offers RDS(on) performance down to to 35 mΩ
Nexperia announced the volume availability of its second-generation 650 V power GaN FET device family, offering significant performance advantages over previous technologies and competitive devices. With RDS(on) performance down to 35 m§Ł (typical), the new power GaN FETs target single-phase AC/DC and DC/DC industrial switched-mode power supplies (SMPS), ranging from 2 kW to 10 kW, especially […]