Silicon Labs announced the addition of Si828x version 2 to its isolated gate driver product family. This update allows the product family to effectively drive Silicon Carbide (SiC) Field Effect Transistor (FET) gates, addressing the growing market for half-and full-bridge inverters and power supplies that require improved power density, cooler operation, and reduced switching losses.
Silicon Labs’ gate drivers have been tested with Wolfspeed SiC MOSFETs in cooperation with Wolfspeed, a premier provider of the most field-tested silicon carbide and GaN Power and RF solutions in the world.
Wolfspeed SiC FETS when used with the Si828x family increase power and conversion efficiency which translates to fewer battery cells, more power delivered to electric motors, and better-operating costs. A test report including Silicon Labs’ Si828x and Wolfspeed’s C3M family is available here, as well as documentation for the half-bridge reference design used in the testing here.
Si828x version 2 includes the following features: 4 Amp peak gate drive current switches SiC FETs and IGBTs efficiently and lowers operating costs for EVs and industrial applications Improved common-mode transient immunity (CMTI) supports decreased switching transition times and enables increased switching frequency, reducing system power loss; Additional Undervoltage (UVLO) settings improve flexibility for SiC FETs and guard against poorly regulated power supplies; Integrated dc-dc converter simplifies design and reduces system cost; FET desaturation protection provided to detect and mitigate fault conditions; Miller clamp included to eliminate parasitic-induced shoot-through conditions;
Si828x version 2 isolated gate drivers are available now.