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MOSFETS

650 V-rated superjunction MOSFETs boast smooth switching action

April 3, 2017 By Aimee Kalnoskas

D3 Semiconductor, a company bringing together affiliated semiconductor companies and top-talent experts, announces its inaugural entry into the power semiconductor market with the launch of its +FET™ line of 650V-rated superjunction MOSFETs.  +FET MOSFETs enable high-efficiency solutions for a range of hard-switched applications, including PFC boost and inverters used in telecom, enterprise computing, UPS and […]

Filed Under: MOSFETS Tagged With: d3semiconductor

Top power electronics threads on EDAboard.com – March

April 1, 2017 By Aimee Kalnoskas

(editor’s note: Intrigued by these power electronics problems? Have a question or another solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the power electronics forum thread.) Relationship between Q factor and the coupling factor of two wireless coils – I am testing […]

Filed Under: DC-DC, FAQ, Featured, MOSFETS, Power Components, Transformers Tagged With: edaboard.com, lineartech, lineartechnologyinc, onsemiconductor, texasinstrumentsinc

eGaN FETs now 15x smaller than silicon equivalents

March 15, 2017 By Aimee Kalnoskas

Efficient Power Conversion Corp. advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ , 100 V) and the EPC2047 (10 mΩ , 200 V) eGaN FETs.   Widening the performance/cost gap with equivalent silicon power transistors, the EPC2045, cuts the die size in […]

Filed Under: MOSFETS, Transistors Tagged With: efficientpowerconversion, epc

Super-junction 900-V MOSFETs deliver low on resistance

March 8, 2017 By Aimee Kalnoskas

Power-supply designers can satisfy system demands for higher power and greater efficiency using the latest 900V MDmesh™ K5 super-junction MOSFETs from STMicroelectronics, which deliver best-in-class on-resistance (RDS(ON)) and dynamic characteristics. A 900V breakdown voltage assures extra safety margin in systems with high bus voltages. The new series contains the first 900V MOSFETs with RDS(ON) below […]

Filed Under: MOSFETS Tagged With: stmicro

Better high-frequency power design through EM simulation

February 28, 2017 By Lee Teschler

pcb sim

Here’s how a 3D EM simulation can be used to accurately gauge gate-driver trace inductance. JOHN RICE | TEXAS INSTRUMENTS INC. HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) were first introduced in the early 1980s and are touted for their exceptional switching qualities. These so-called heterojunction, field effect transistors (FETs) were originally developed for high-frequency RF power […]

Filed Under: Featured, MOSFETS, Power Electronics Handbook Tagged With: CST Microwave Studio, efficientpowerconversioncorporation, GaN, LMG3410, texasinstrumentsinc

SiC MOSFETs handle 1.2 kV with 75 mΩ ON resistance

February 23, 2017 By Aimee Kalnoskas

Wolfspeed has expanded its  C3M platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI, and enabling 99% efficiency levels in three-phase power factor correction circuits. These features enable designers of […]

Filed Under: MOSFETS Tagged With: wolfspeed

Automotive-compliant power ICs launching at Embedded World

February 17, 2017 By Aimee Kalnoskas

Diodes Incorporated will be introducing a number of notable new products at Embedded World 2017 in Nuremberg, Germany, March 14-16. These include the industry’s first unidirectional 1800W automotive-compliant transient voltage suppressors; 40V and 60V dual, co-packaged enhancement mode MOSFETs that are also qualified for automotive applications; and, coming from its Pericom connectivity product line, the […]

Filed Under: MOSFETS, Power Components, Semiconductor, Transistors Tagged With: diodesincorporated

SiC gate driver optimized for 62mm modules

February 17, 2017 By Aimee Kalnoskas

AgileSwitch, LLC introduces the 62EM (62mm Electrical Master) SiC MOSFET gate driver series. The easy-to-use, plug and play driver is compatible with most 62mm SiC MOSFET modules. Applications including heavy-duty traction vehicles, auxiliary power units in trains, buses and trolleys, induction heating systems and other high-power industrial systems are rapidly moving from IGBTs to SiC […]

Filed Under: MOSFETS Tagged With: agileswitch

More packaging options for motor drive power modules

January 30, 2017 By Aimee Kalnoskas

STMicroelectronics has extended its SLLIMM nano series of Intelligent Power Modules (IPMs) for motor drives with more package options that help minimize overall size and complexity, extra integrated features, and greater efficiency leveraging the latest-generation 500V MOSFETs. With a current rating of 1A or 2A, the new IPMs target applications up to 100 Watts, such […]

Filed Under: MOSFETS, Power Supplies, Three-phase Tagged With: stmicro

eGaN FET and IC applications center to open in Virginia

January 27, 2017 By Lee Teschler

Efficient Power Conversion Corp.(EPC), a supplier of eGaN FETs, says it will open an Applications Center in Blacksburg, Va. This center will support research and development for the applications of enhancement-mode gallium nitride transistors and ICs. GaN technology has enabled emerging applications such as wireless power transfer, LiDAR for autonomous vehicles, and envelope tracking for […]

Filed Under: MOSFETS Tagged With: efficientpowerconversioncorporation

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Featured Contributions

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

GaN reliability milestones break through the silicon ceiling

Developing power architecture to support autonomous transportation

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