D3 Semiconductor, a company bringing together affiliated semiconductor companies and top-talent experts, announces its inaugural entry into the power semiconductor market with the launch of its +FET™ line of 650V-rated superjunction MOSFETs. +FET MOSFETs enable high-efficiency solutions for a range of hard-switched applications, including PFC boost and inverters used in telecom, enterprise computing, UPS and […]
MOSFETS
Top power electronics threads on EDAboard.com – March
(editor’s note: Intrigued by these power electronics problems? Have a question or another solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the power electronics forum thread.) Relationship between Q factor and the coupling factor of two wireless coils – I am testing […]
eGaN FETs now 15x smaller than silicon equivalents
Efficient Power Conversion Corp. advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ , 100 V) and the EPC2047 (10 mΩ , 200 V) eGaN FETs. Widening the performance/cost gap with equivalent silicon power transistors, the EPC2045, cuts the die size in […]
Super-junction 900-V MOSFETs deliver low on resistance
Power-supply designers can satisfy system demands for higher power and greater efficiency using the latest 900V MDmesh™ K5 super-junction MOSFETs from STMicroelectronics, which deliver best-in-class on-resistance (RDS(ON)) and dynamic characteristics. A 900V breakdown voltage assures extra safety margin in systems with high bus voltages. The new series contains the first 900V MOSFETs with RDS(ON) below […]
Better high-frequency power design through EM simulation
Here’s how a 3D EM simulation can be used to accurately gauge gate-driver trace inductance. JOHN RICE | TEXAS INSTRUMENTS INC. HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) were first introduced in the early 1980s and are touted for their exceptional switching qualities. These so-called heterojunction, field effect transistors (FETs) were originally developed for high-frequency RF power […]
SiC MOSFETs handle 1.2 kV with 75 mΩ ON resistance
Wolfspeed has expanded its C3M platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI, and enabling 99% efficiency levels in three-phase power factor correction circuits. These features enable designers of […]
Automotive-compliant power ICs launching at Embedded World
Diodes Incorporated will be introducing a number of notable new products at Embedded World 2017 in Nuremberg, Germany, March 14-16. These include the industry’s first unidirectional 1800W automotive-compliant transient voltage suppressors; 40V and 60V dual, co-packaged enhancement mode MOSFETs that are also qualified for automotive applications; and, coming from its Pericom connectivity product line, the […]
SiC gate driver optimized for 62mm modules
AgileSwitch, LLC introduces the 62EM (62mm Electrical Master) SiC MOSFET gate driver series. The easy-to-use, plug and play driver is compatible with most 62mm SiC MOSFET modules. Applications including heavy-duty traction vehicles, auxiliary power units in trains, buses and trolleys, induction heating systems and other high-power industrial systems are rapidly moving from IGBTs to SiC […]
More packaging options for motor drive power modules
STMicroelectronics has extended its SLLIMM nano series of Intelligent Power Modules (IPMs) for motor drives with more package options that help minimize overall size and complexity, extra integrated features, and greater efficiency leveraging the latest-generation 500V MOSFETs. With a current rating of 1A or 2A, the new IPMs target applications up to 100 Watts, such […]
eGaN FET and IC applications center to open in Virginia
Efficient Power Conversion Corp.(EPC), a supplier of eGaN FETs, says it will open an Applications Center in Blacksburg, Va. This center will support research and development for the applications of enhancement-mode gallium nitride transistors and ICs. GaN technology has enabled emerging applications such as wireless power transfer, LiDAR for autonomous vehicles, and envelope tracking for […]
