Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of […]
Transistors
GaN power transistors hit 100 V, 120 A
GaN Systems unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of GaN Systems’ own 90 A part and 2.4X-to-4.6X the current rating of other high current GaN in the industry. The GS-010-120-1-T is an […]
GaN power transistor handles 120 A
GaN Systems announced the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The numerous advantages of GaN can be applied to much higher power levels today in the automotive, industrial, and […]
Buck converter evaluation board employs 100-V E-Mode GaN transistors
GaN Systems, the global leader in GaN power semiconductors, today announced the availability of its 5MHz buck converter evaluation board (GS61008P-EVBHF) using GaN Systems’ 100V E-Mode GaN transistors and pSemi’s PE29101 integrated high-speed driver. The outputs of the pSemi driver can provide switching transition speeds in the sub nano-second range. This evaluation board allows customers […]
IGBT modules carry integrated shunt resistors for current monitoring
Infineon Technologies AG now offers the EconoDUAL 3 modules to with integrated shunt resistors for current monitoring in the AC path. Implementing these devices helps inverter manufacturers to reduce cost, improve performance and simplify the inverter designs. The EconoDUAL 3 with integrated shunts can be used in a wide variety of applications, such as general […]
Schottky diodes current ratings expanded to 8A, 15A, and 20A
Littelfuse introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family, which was originally released in May 2017. The LSIC2SD120A08 Series, LSIC2SD120A15 Series, and LSIC2SD120A20 Series offer current ratings of 8A, 15A ,20A, respectively and are provided in the popular TO-220-2L package. Additionally, the LSIC2SD120C08 Series offers a current […]
GaN power transistor is eight times smaller than equivalent 40-V MOSFETs
The EPC2049 power transistor targets uses in applications that include point-of-load converters, LiDAR, envelope tracking power supplies, Class-D audio, and low-inductance motor drives. Developed by EPC, the EPC2049 has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175-A pulsed output current. The chip-scale packaging of The EPC2049 handles thermal […]
Auto-grade regulator transistors tolerate 60-V battery transients
The ZXTR2105FQ, ZXTR2108FQ () and ZXTR2112FQ regulator transistors announced by Diodes Incorporated are qualified to AEC-Q101 standards for high reliability and are product part approval process (PPAP)-capable. Designed to deliver 5V, 8V, or 12V regulated outputs from nominal battery supplies of 12V or 24V, these regulator transistors are well-suited for powering vehicle electronics. These devices can […]
6kV rectifier diode boasts average current rating up to 6395 A
IXYS Corporation announced the launch of a high current 6kV rectifier diode with an average current rating up to 6395 A, at a heat sink temperature of 55 degrees Celsius. The new device is IXYS’ highest current rated rectifier diode in this voltage class and is believed to be the highest current rating available today […]
Deep-depletion technique could bring better power MOSFETs
Researcher say the deep-depletion regime of bulk-boron-doped wide band gap semiconductors could be an avenue toward power MOSFETs able to handle large voltages and high temperatures. A group with members based in France, the UK and Japan applied the technique to diamond-based MOSFETs. But they say a similar scheme would work in other wide-band-gap semiconductors. […]