Infineon Technologies has expanded its collaboration with Anker to support the development of compact high-power chargers capable of delivering up to 160 W. The latest result of this partnership is Anker’s 160 W Prime Charger, which incorporates Infineon’s XDP digital control technology and CoolGaN-based power devices. The charger achieves high power density in a credit-card-sized […]
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1400 V SiC MOSFETs operate at 200 °C junction temperature continuously
High-power applications such as electric vehicle charging, battery energy storage systems, and commercial, construction, and agricultural vehicles (CAVs) are driving the demand for higher system-level power density and efficiency to meet increasing performance expectations. At the same time, these requirements introduce new design challenges, including reliable operation under harsh environmental conditions, robustness against transient overloads, […]
How do SiC and GaN devices age?
By Peter Friedrichs, Infineon Technologies SiC and GaN devices operate at higher stress levels than silicon devices. The semiconductor and automotive industries have strict qualification tests for that. Silicon carbide (SiC) and gallium nitride (GaN) wide bandgap (WBG) technologies are well known for their performance advantages over silicon (Si) in many high-power areas, including their […]
Extended power range GaN-based USB-C adapters and chargers deliver increased performance
By Peter Bredemeier, Principal Engineer for Power Systems and Solutions Division, Infineon Technologies An innovative, highly integrated combo controller for the joint control of the PFC and the hybrid flyback stage. The Universal Serial Bus Power Delivery Specification (Revision 3.1, Version 1.1) (USB-PD) standard enables higher power levels of up to 240 W. The wide […]
Super-junction 950-V MOSFETs feature low on resistance
To address contemporary market needs for improved form factors and energy-efficient products, Infineon Technologies has developed a new CoolMOS PFD7 high-voltage MOSFET family, setting a new benchmark in 950 V super junction (SJ) technology. The new 950 V series combines outstanding performance with state-of-the-art ease of use and features an integrated fast body diode ensuring […]
Selecting a gate driver for ASIL-certified systems
Several safety features now found in gate driver integrated circuits make it easier for automotive system designs to get ASIL certification. David Divins • Infineon Technologies The Automotive Safety Integrity Level (ASIL) is a risk classification system defined by the ISO 26262 standard for the functional safety of road vehicles. There are four ASIL safety […]
Single-package gate-driver/MCU targets battery-powered three-phase BLDC motors
Due to their numerous advantages, three-phase brushless DC (BLDC) motors are becoming the preferred choice for designing modern battery-powered motor products. However, reducing their size and weight to enhance ergonomics and extended battery life leads to design challenges. To help designers meet the end-market objectives, Infineon Technologies has launched the fully programmable motor controllers MOTIX IMD700A and […]
The evolution of smart MOSFET technologies
A review of MOSFET advances helps predict where the technology is likely to head. Ashita Mirchandani, Bastian Lang • Infineon Technologies The past 50 years have seen unprecedented changes enabled by technology. The trend will continue with emerging technologies such as e-mobility, the Internet of Things (IoT), artificial intelligence, connectivity and 5G. At the heart […]
Three-phase motor control IC is fully programmable
The EiceDRIVER product portfolio of three-phase gate driver ICs now includes the 6EDL7141, a fully programmable solution for advanced motor control applications. Packaged in a 48-pin VQFN with a 7×7-mm2 footprint, the 6EDL7141 delivers higher power density and improves overall system efficiency. Combined with Infineon’s market-leading power MOSFETs, customers are now able to develop their […]
SiC 1,700-V MOSFETs designed for aux power supplies in 3-phase conversion systems
Infineon Technologies complements its CoolSiC MOSFET offering with another voltage class. Having added 650V to the portfolio earlier this year, the company is now launching the 1700V class with its proprietary trench semiconductor technology. Maximizing the strong physical characteristics of silicon carbide (SiC), this ensures that the new 1700V surface-mounted devices (SMD) offer reliability, as […]
