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MOSFETS

TVS diodes protect automotive SiC circuits

December 18, 2024 By Redding Traiger

Littelfuse, Inc. announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression (TVS) diode specifically designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications. This innovative product addresses the increasing demand for reliable overvoltage protection in next-generation electric vehicle (EV) systems, delivering a compact, single-component solution that […]

Filed Under: Automotive, Development Tools, diodes, MOSFETS, Power Components, Power Management Tagged With: littelfuse

20A hot-swap controller with 2.8 mΩ integrated MOSFET

December 7, 2024 By Redding Traiger

HMI announces the release of the HL8520E, a state-of-the-art hot-swap/E-Fuse device designed to offer superior protection and power control for sensitive load circuitry.  The HL8520E is designed to protect systems from input transients, shorts, and voltage spikes that could damage load circuitry, while managing power delivery to enhance reliability. With an input voltage range of […]

Filed Under: Development Tools, Fuses, MOSFETS, Power Components, Power Management Tagged With: hmi

Power MOSFET achieves 0.34 mΩ on resistance

December 4, 2024 By Redding Traiger

Vishay Intertechnology, Inc. introduced a new 40 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK 10×12 package with best-in-class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 % while offering 58 % lower on-resistance than 40 V MOSFETs in the TO-263-7L. With on-resistance down to […]

Filed Under: Automotive, Development Tools, Industrial, MOSFETS, Power Management, Robotics Tagged With: vishayintertechnology

150 V MOSFET claims new low for on resistance

November 21, 2024 By Redding Traiger

Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6×5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3 % and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power […]

Filed Under: Data center, Development Tools, MOSFETS, Motors and motor control, Power Components Tagged With: vishayintertechnology

MOSFET design combines low RDS(on) with extended safe operating area

November 13, 2024 By Redding Traiger

Infineon Technologies AG announces the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET. The device prevents damage to the load by limiting the high inrush current and ensures minimal losses […]

Filed Under: Automotive, electronica 2024, Events, MOSFETS, Power Components Tagged With: infineontechnolgiesag

Mitigate reverse recovery overshoot in MOSFET body diodes

November 6, 2024 By Nicolas Lozada-Smith, Power Application Engineer, Wolfspeed

Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster switching times, significantly reducing switching losses. These advantages stem from the unique electrical and material properties of SiC-based devices — snappy reverse recovery inherent to the structure of […]

Filed Under: diodes, EMI/EMC/RFI, FAQ, Featured, Featured Contributions, MOSFETS, Transistors

IGBT and MOSFET drivers provide 4 A in 200 nsec

October 23, 2024 By Redding Traiger

Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum. Consisting of an AlGaAs LED optically coupled to an […]

Filed Under: Development Tools, Industrial, MOSFETS, Power Components, Power Management, power modules Tagged With: vishayintertechnology

Bipolar junction transistors show their muscle

October 23, 2024 By Burkhard Laue, Senior Principle Product Application Engineer, Nexperia

Recent enhancements to the classic BJT show that the classic transistor has plenty of life left and can challenge SiC and GaN devices in some power applications. Amidst the advances in CMOS and wide bandgap semiconductor technology, you can easily forget that the first transistor invented by William Shockley in 1949 was a bipolar junction […]

Filed Under: DC-DC, FAQ, Featured, Featured Contributions, LED Lighting, MOSFETS, Transistors Tagged With: FAQ, nexperia

High-side gate driver protects battery-powered tools from faults

October 22, 2024 By Redding Traiger

Infineon Technologies AG  has now introduced the EiceDRIVER 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault. The device provides fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities. It consists of an […]

Filed Under: Consumer electronics, Development Tools, drivers, MOSFETS, Power Management, Robotics Tagged With: infineontechnolgiesag

30 V MOSFET reduces on resistance by 40%

September 13, 2024 By Redding Traiger

Infineon Technologies AG has introduced its new StrongIRFET 2 power MOSFET 30 V portfolio, expanding the existing StrongIRFET 2 family to address the growing demand for 30 V solutions in the mass market segment. Optimized for high robustness and ease of use, the new power MOSFETs were specifically designed to meet the requirements of a […]

Filed Under: Development Tools, Industrial, MOSFETS, Motors and motor control, Power Components, Power Management Tagged With: infineontechnolgiesag

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Featured Contributions

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

GaN reliability milestones break through the silicon ceiling

Developing power architecture to support autonomous transportation

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