Infineon Technologies AG broadens its level-shift EiceDRIVER portfolio with a 1200 V three-phase gate driver. It is based on the company’s unique silicon-on-insulator (SOI) technology. The device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These unique features reduce BOM and enable a […]
MOSFETS
SMD transformers optimized for SiC MOSFET gate drivers
The WE-AGDT series makes a new SMT assembly transformer available, which, at the same time, is part of a power supply solution developed by Würth Elektronik for demanding gate control of SiC MOSFETs. The innovative WE-AGDT is a compact transformer in an EP7 package. It features a wide input voltage range from 9 to 36 […]
750-V SiC FETs feature reduced on-resistance, low intrinsic capacitance
Devices based on an advanced Gen 4 SiC FET technology platform are the first and only 750-V SiC FETs currently available on the market. These Gen 4 devices enable new performance levels, based on leadership Figures of Merit (FoM), that benefit power applications across automotive, industrial charging, telecom rectifiers, datacenter PFC, and dc-dc conversion as […]
IEDM highlights: GaN HFETs get a p-channel version that operates at gigahertz speeds
Researchers at Cornell University and Intel Corp. say they’ve devices a wide-bandgap p-type transistor counterpart of the n-channel GaN HFET. In a paper to be presented at the upcoming IEDM conference (Paper #8.3, “GaN/AlN p-Channel HFETs with I max >420 mA/mm and ~20 GHz f T /f MAX ,” K. Nomoto et al, Cornell University/Intel), […]
Fast switching 600-V super junction MOSFETs come in SMD-type package
Alpha and Omega Semiconductor Limited announced the release of a fast switching 600V αMOS5 Super Junction MOSFETs in SMD-type TOLL Package. αMOS5 is AOS’s latest generation of high voltage MOSFET, designed to meet the high efficiency and high-density needs for quick charger, adapter, PC power, server, industrial power, telecom, and Hyperscale datacenter applications. The new aMOS5 […]
5 mm x mm, 60 V MOSFET is AEC-Q101-qualified
Vishay Intertechnology, Inc. introduced an AEC-Q101 qualified n-channel 60 V MOSFET that is the industry’s first such device in the PowerPAK SO-8L dual asymmetric package. The new Vishay Siliconix SQJ264EP is designed to meet the need for space savings and increased efficiency in DC/DC switch-mode power supplies for automotive applications. The new device combines a […]
SMD MOSFETs cut losses in motor drive applications
Infineon Technologies AG supports the robotics and automation industry in implementing maintenance-free motor drive inverters. By introducing the new CoolSiC MOSFET with.XT interconnection technology in a 1200 V optimized D 2PAK-7 SMD package, passive cooling becomes possible. Up to 80 percent loss reduction compared to a silicon-based solution eliminates the need for cooling fans and […]
High-voltage gate driver with 6-kV galvanic isolation comes in compact package
STMicroelectronics’ STGAP2HS is a compact, high-voltage gate driver for applications that require up to 6kV galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry. The 1200V device can sink and source up to 4A output current to simplify the design and enhance the reliability of mid- and high-power converters, power supplies, and inverters […]
40-V MOSFETs lower thermal resistance, reduce RDS(on) up to 25%
Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies AG tackles this challenge by focusing on system innovation with enhancements on the component level. Adding to the 25 V device introduced in February, Infineon now brings the OptiMOS 40 V low-voltage power MOSFET to the market. […]
High-efficiency 750-V dc/dc converters optimized for light-rail/industrial applications
Powerbox has announced the release of its new high-efficiency 750VDC input DC/DC converter for light-rail and industrial applications. The switching stage of the new PRBX ENR500D is based on an enhanced resonant topology providing high efficiency of 95% typical across the low to high load range. Designed for railway applications, the ENR500D fulfills the stringent […]