Efficient Power Conversion (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed, and accuracy of object detection are critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs […]
drivers
Arm M3-based motor drivers carry 32k and 64k flash
TDK Corporation has expanded its Micronas embedded motor controller portfolio to address higher temperature applications. The HVC 4222F and HVC 4422F were developed for operating smart actuators in applications with ambient temperature requirements up to 150 °C. HVC 4222F offers 32k flash memory while the HVC 4422F comes with 64k flash for more complex software […]
Laser driver IC targets lidar time-of-flight apps
EPC announces the introduction of a laser driver that integrates a 40 V, 10 A FET with integrated gate driver and 3.3 logic level input in a single chip for time-of-flight lidar systems used in robotics, surveillance systems, drones, autonomous cars, and vacuum cleaners. The EPC21601 is a laser driver that is controlled using 3.3 […]
Gate-driver boards optimized for high-power modules
Silicon Labs introduced the new Si823Hx Gate Driver Board, an all-in-one isolation solution perfectly suited for the recently launched Wolfspeed WolfPACK power module. Wolfspeed power modules are used across numerous power applications, including EV chargers and motor drives in the industrial and automotive markets. Featuring the Si823Hx isolated gate driver and Si88xx digital isolator with […]
Motor controller includes three-phase gate driver and voltage regulator
Infineon Technologies AG introduces the new IMD110 SmartDriver series. The smart motor controller family combines the iMOTION Motion Control Engine (MCE) with a three-phase gate driver in a compact package. The integrated gate driver is based on the company’s unique silicon-on-insulator (SOI) technology, it can drive a wide variety of MOSFETs and IGBTs in variable […]
High-power 650V/800V GaN ICs combine power FET and gate driver
Navitas Semiconductor announced the NV6128, a new high-power 650V/800V-rated GaNFast power IC to address the high-power mobile and consumer power electronics market and take market share from the old, slow, silicon chip. The 70 mOhm NV6128 represents a 66% increase in current capability, in a small, 6 x 8 mm PQFN package with a proprietary, […]
Maximizing the performance of SiC through gate drive techniques
New gate drivers simplify the task of deploying silicon-carbide FETs to shrink the size and boost the efficiency of power inverters. Charlie Ice Silicon Labs The electric vehicle revolution is upon us. Automotive companies search desperately for a technological edge, investors see EV companies as more valuable than traditional automakers, and governments press ahead with […]
New 24 V dual-channel low-side gate driver handles fast MOSFETs, high-current IGBTs
Infineon Technologies AG broadens its EiceDRIVER portfolio with the new 24 V dual-channel low side gate driver with an integrated thermal pad. It can be operated with high switching frequencies as well as the highest peak output currents and offers an enable function. The gate driver is suitable for applications with higher switching frequencies such […]
Half-bridge PCBs help evaluate GaN drivers, transistors
GaN Systems announced the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to 3kW (GS-EVB-HB-66508B-RN) and up to 6kW (GS-EVB-HB-66516T-RN), and include the Renesas RAA226110 low-side GaN FET driver. These cards are the industry’s […]
SiPs combine two GaN HEMTs, high-voltage gate drivers
Building upon the advantages of STMicroelectronics’ MasterGaN platform, MasterGaN2 is the first in the new family to contain two asymmetric gallium-nitride (GaN) transistors, delivering an integrated GaN solution suited to soft-switching and active-rectification converter topologies. The 650V normally-off GaN transistors have on-resistance (RDS(on)) of 150mΩ and 225mΩ. Each is combined with an optimized gate driver, making GaN […]
