Solitron Devices is pleased to announce the introduction of the SD11740 , 1200V Silicon Carbide (SiC), low RDS(on) MOSFET. Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications, Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a SOT-227, the SD11740 offers ultra-low RDS(on) of 8.6mΩ. The SOT-227 style […]
MOSFETS
Gate drivers design drives high-voltage power devices for TVs
Renesas Electronics Corporation announced a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters. Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU and the IGBTs […]
Automotive-grade devices available in tiny 32.7 mm x 22.5 mm package
STMicroelectronics has introduced five power-semiconductor bridges in popular configurations, housed in ST’s advanced ACEPACK SMIT package that eases assembly and enhances power density over conventional TO-style packages. Engineers can choose from two STPOWER 650V MOSFET half bridges, a 600V ultrafast diode bridge, a 1200V half-controlled full-wave rectifier, and a 1200V thyristor-controlled bridge leg. All devices meet […]
SiC devices provide high-efficiency for energy infrastructure and industrial apps
onsemi introduced “EliteSiC” as the name of its silicon carbide (SiC) family. This week, the company will showcase three new members of the family – the 1700 V EliteSiC MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes – at the Consumer Electronics Show (CES) in Las Vegas. The new devices provide reliable, high-efficiency performance for energy […]
MOSFETS target EV motor, battery management apps
Magnachip Semiconductor Corporation announced that the company had launched its eighth-generation 150V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)1 optimized for Light Electric Vehicle (LEV) motor controllers and battery management systems (BMSs). Energy efficiency plays a critical role in electric devices regarding power consumption and product stability. This newly-released MOSFET (MDT15N054PTRH) features Magnachip’s eighth-generation trench MOSFET technology […]
High-efficiency 20-V N-channel MOSFET optimized for switching in small, thin devices
ROHM Semiconductor announced they have developed a compact, high-efficiency 20V N-channel MOSFET (RA1C030LD), optimized for switching in small, thin devices, including smartphones and wearables such as wireless earbuds and other hearable equipment. In recent years, the increasing sophistication and power requirements of compact devices have resulted in larger batteries that reduce the space available for […]
Power MOSFETs include PQFN dual-side cooled 25-150 V devices
The design of future power electronic systems is continuously pushed to improve state-of-the-art performance and power density. Supporting this trend, Infineon Technologies AG launches a new Source-Down 3.3 x 3.3 mm² PQFN product family in the 25-150 V classes with Bottom-Side (BSC) and Dual-Side Cooling (DSC) variants. The new product family provides significant enhancements on […]
GaN FETs feature low on resistance with 150/200-V ratings
EPC introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with an exposed top and tiny 3 mm x 5 mm footprint. These devices are the lowest on-resistance (RDS(on)) FETs in the market at 150 V and 200 V in a size that […]
AEC-Q101 qualified GaN FETs target 48-12 V dc/dc conversion, infotainment, LiDAR apps
Efficient Power Conversion Corporation expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 […]
eGaN power FETs feature high power density, tiny footprint
EPC launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products. The EPC2619 has an RDS(on) of just 4 mOhms in a tiny, 1.5 mm x 2.5 mm, footprint. The maximum RDS(on) x Area of […]