Advanced Linear Devices Inc. (ALD) announced its latest addition to its Supercapacitor Auto-Balancing (SAB™) MOSFET family. This dual MOSFET provides unmatched auto-balancing capabilities and power management for supercapacitors ranging from 2.8V to 3.3V. The ALD910030 uses virtually no power for cell balancing and prevents most catastrophic failures. The chip enhances performance across various sectors, including […]
MOSFETS
Power MOSFET reaches 0.048 Ω RDSon
Vishay Intertechnology, Inc. introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2 % while offering a 65.4 % lower resistance times gate charge, a key figure of […]
500 V SMT transformers shrink in size
TDK has announced the EPCOS EP9 series of surface-mount transformers (ordering code B82804E). At 13 × 11 × 11 mm, these parts are smaller than the company’s existing E10EM series of SMT transformers designed for IGBT and FET gate driver circuits. Engineered for high performance in demanding e-mobility and industrial applications with 500 V system […]
GaN transistors adopt industry-standard MOSFET package dimensions
Infineon Technologies AG addresses this challenge by announcing the high-performance gallium nitride CoolGaN G3 Transistor 100 V in RQFN 5×6 package (IGD015S10S1) and 80 V in RQFN 3.3×3.3 package (IGE033S08S1). The CoolGaN G3 100 V Transistor devices will be available in a 5×6 RQFN package with a typical on-resistance of 1.1 mΩ. Additionally, the 80 […]
1200 V MOSFET design cuts switching losses for EV charging applications
SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage applications. The new design achieves a 20% reduction in die size compared to the company’s second-generation devices while delivering enhanced switching performance and efficiency metrics. The device features key electrical specifications including a 1200V drain-to-source voltage (VDS), total switching […]
Compact MOSFET packaging reduces footprint and supports optical inspection
Renesas Electronics Corporation introduced new 100V high-power N-Channel MOSFETs that deliver industry-leading high-current switching performance for applications such as motor control, battery management systems, power management, and charging. End products include electric vehicles, e-bikes, charging stations, power tools, data centers, uninterruptable power supplies (UPS,) and more. Renesas has developed a new MOSFET wafer manufacturing process […]
TVS diodes protect automotive SiC circuits
Littelfuse, Inc. announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression (TVS) diode specifically designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications. This innovative product addresses the increasing demand for reliable overvoltage protection in next-generation electric vehicle (EV) systems, delivering a compact, single-component solution that […]
20A hot-swap controller with 2.8 mΩ integrated MOSFET
HMI announces the release of the HL8520E, a state-of-the-art hot-swap/E-Fuse device designed to offer superior protection and power control for sensitive load circuitry. The HL8520E is designed to protect systems from input transients, shorts, and voltage spikes that could damage load circuitry, while managing power delivery to enhance reliability. With an input voltage range of […]
Power MOSFET achieves 0.34 mΩ on resistance
Vishay Intertechnology, Inc. introduced a new 40 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK 10×12 package with best-in-class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 % while offering 58 % lower on-resistance than 40 V MOSFETs in the TO-263-7L. With on-resistance down to […]
150 V MOSFET claims new low for on resistance
Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6×5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3 % and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power […]
