Microsemi Corporation announced its extremely low inductance package dedicated to high current, low specific on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules. The new package, developed specifically for the company’s SP6LI product family, is designed to offer 2.9 nanohenry (nH) stray inductance suitable for SiC MOSFET technology and enable high current, high switching frequency as […]
MOSFETS
3-kW 3-phase PFC reference design uses SiC diodes and MOSFETs
Microsemi Corporation announced the availability of its new scalable 30-kilowatt (kW), three-phase Vienna power factor correction (PFC) topology reference design featuring its Silicon Carbide (SiC) diodes and MOSFETS. Developed in collaboration with North Carolina State University (NCSU), the scalable, user-friendly solution is ideally suited for fast electric vehicle (EV) charging and other high power automotive and industrial applications, providing customers with more efficient switching […]
Single-channel IGBT/MOSFET gate-driver ICs get UL 1577 certification
Infineon Technologies AG now offers the EiceDRIVER 1EDC Compact 300 mil family of single channel gate driver ICs. With an insulation test voltage of V ISO = 2500 V(rms) for 60 sec these galvanically isolated drivers are recognized under UL 1577. Due to their high switching frequency of up to 1,000 kHz they do not only drive IGBTs, […]
IGBT, MOSFET drivers get protective conformal coating
Power Integrations today introduced factory conformal coating for its SCALE IGBT and MOSFET drivers. Conformal coating enhances system reliability by protecting electronic components against contaminants such as pollution, dust and condensation, which may cause corrosion. Power Integrations’ factory-coated gate drivers reduce inventory cost, lead time and overall cost of ownership by eliminating the need for […]
Power Electronics Top Talks in March on EDABoard.com forums
Peer-to-peer, engineer-to-engineer questions and answers from the EDABoard.com engineering community around power electronics. Click the “Read more” link and follow the entire conversation and maybe add your two cents by logging in to EDAboard.com Ground problem cause SPI to fail – I have designed a power electronic inverter. The DC link is supplied by single phase […]
Fixed-frequency flyback PWM controller/MOSFET combo handles up to 43 W
Today’s power supplies demand components which provide best-in-class performance, efficiency, robustness, and ease of design. To meet this need, Infineon Technologies AG announces the fixed frequency 700 V/800 V CoolSET™ 5 th generation. This solution combines a PWM controller IC with the latest 700 V and 800 V CoolMOS P7 MOSFETs in a single package. The single platform supports […]
100V MOSFETs improve switching, reliability with low Qrr and high 175 C rating
Nexperia, the former Standard Products division of NXP, today announced its NextPower 100 V family of power MOSFETs which delivers low reverse recovery charge (Qrr) and includes parts that are qualified to 175°C in the LFPAK56 (PowerSO8) package. NextPower 100 V MOSFETs are Nexperia’s latest generation parts recommended for high efficiency switching and high reliability […]
100-V and 200-V GaN FET power supplies are rad-hard
The space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs from Renesas Electronics Corporation enables primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, […]
Power Electronics Top Talks in January on EDABoard.com forums
Peer-to-peer, engineer-to-engineer questions and answers from the EDABoard.com engineering community around power electronics. Click the “Read more” link and follow the entire conversation and maybe add your two cents by logging in to EDAboard.com Extremely simple overnight AAA Ni-MH charger – I want to build an ultra simple charger, to charge a 750mAh 1.2V AAA Ni-MH […]
How advanced IGBT gate drivers simplify high-voltage, high-current inverters
IGBTs have nuanced operations associated with high current densities and temperature that force IGBT gate drivers to incorporate sophisticated features. Tom Zemites, Kim Gauen, NXP The automotive industry is moving inexorably towards electrification. As automakers move from electric assistance to full autonomy, the trend in EV invertors is toward higher system efficiency and functional safety […]