Infineon Technologies AG announces its 200 mm silicon carbide (SiC) manufacturing capability, with initial product releases scheduled for Q1 2025. The products, manufactured in Villach, Austria, target high-voltage applications including renewable energy systems, rail transport, and electric vehicles. The company’s Kulim, Malaysia facility continues its transition from 150 mm to 200 mm wafer production, with […]
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APEC 2024: Semiconductors, modules, transformers, and chargers
Power supplies from phone chargers to EVs to industrial machinery rely on semiconductors, either in discrete packages or integrated into power modules, to deliver power. APEC 2024 was full of power sources and components. The roundup below highlights regulators, switches, and power semiconductors. We also highlight wireless power delivery and chargers. Be sure to see […]
Achtung! Power technology on display at PCIM Nuremberg
PCIM Europe is billed as the world’s leading exhibition and conference for power electronics, intelligent motion, renewable energy, and energy management. Recently wrapping up in Nuremberg, the exhibition portion of PCIM featured over 500 booths. Here are some of the more notable technology displays we saw in touring the event. NEXT PAGE: Smaller inverters for […]
Why wide bandgap HEMTs excel at efficient power conversion
High electron mobility transistors reduce power supply size thanks to special make-up that eliminates sources of energy loss. Andrea Bricconi | Wei Deng, Infineon Technologies AG It is an exciting time for power supply designers. We are learning how devices based on wide bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride-on-silicon (GaN-on-Si) […]
Single-channel IGBT/MOSFET gate-driver ICs get UL 1577 certification
Infineon Technologies AG now offers the EiceDRIVER 1EDC Compact 300 mil family of single channel gate driver ICs. With an insulation test voltage of V ISO = 2500 V(rms) for 60 sec these galvanically isolated drivers are recognized under UL 1577. Due to their high switching frequency of up to 1,000 kHz they do not only drive IGBTs, […]
Top power electronics threads on EDAboard.com – April
(editor’s note: Intrigued by these power electronics problems? Have a question or another solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the power electronics forum threads.) Cheap mains conducted emissions tester? – Our direct drive, 100W offline, non-isolated LED driver failed EMC […]
Stand-alone quasi-resonant flyback controller and integrated power IC optimized for efficient ac/dc converter use
Infineon Technologies AG introduces the fifth generation of the stand-alone quasi-resonant flyback controller and integrated power IC CoolSET™ family. The latest development in this family of devices offers improved efficiency, faster startup, and better overall performance under varying load conditions. The new ICs are especially designed for AC/DC switch mode power supplies in a great […]
Logic-level MOSFETs optimized for wireless charging apps
Infineon Technologies AG introduces a new logic level IR MOSFET™ family. It comprises three different voltage classes, 60 V, 80 V, and 100 V. The new devices are available in a 2 mm x 2 mm PQFN package which is perfect for form-factor critical wireless charging, adapter, and telecom applications. The small package size enables […]
New 600-V MOSFETs boost efficiency, minimize thermal losses
Infineon Technologies AG extends its existing portfolio of CoolMOS™ technologies with the 600 V CoolMOS™ P7 and 600 V CoolMOS ™ C7 Gold (G7) series. The product families are designed to operate at 600 V breakdown voltage and deliver improved superjunction MOSFET performance. They achieve unmatched power density in the respective target applications. The newly introduced P7 […]
High power density IGBT modules target motor drives, inverters
Infineon Technologies AG is expanding its offering of 62 mm IGBT modules. The new power modules serve the growing demand for higher power density without increasing package size. This is realized by a larger chip area and an adapted DCB substrate in the proven 62 mm package. Typical applications for modules with 1200 V blocking […]
