Wise-integration, a pioneer in digital control of gallium-nitride (GaN) power supplies and GaN ICs, has launched its first commercial product: the 120mOhm WI62120 half-bridge power circuit, providing power electronics designers with new levels of power density, performance, and cost-effectiveness. The JEDEC-certified WI62120, a 650V enhancement-mode GaN-on-silicon integrated circuit, is part of Wise-integration’s WiseGan family of power […]
Semiconductor
Configurable SiC digital gate drivers and the electrification revolution
Silicon-carbide MOSFETs and digital gate drivers work together to make electrified metro, subway, and other heavy transportation vehicles possible. Nitesh Satheesh, Tomas Krecek, Perry Schugart, Xuning Zhang, Kevin Speer, Microchip Technology Green initiatives continue to transform power electronic system designs in industrial, aerospace, and defense applications, and especially the transportation sector. Silicon Carbide (SiC) technology […]
GaN power semis boast 120mΩ max RDS(on), at 15A max current capability
STMicroelectronics has revealed a new family of GaN power semiconductors in the STPOWER portfolio that can significantly reduce energy use and enable slimmer designs in a huge variety of electronic products. Target applications include consumer equipment such as chargers, external power adapters for PCs, LED-lighting drivers, and power supplies inside televisions and home appliances. This equipment […]
The evolution of smart MOSFET technologies
A review of MOSFET advances helps predict where the technology is likely to head. Ashita Mirchandani, Bastian Lang • Infineon Technologies The past 50 years have seen unprecedented changes enabled by technology. The trend will continue with emerging technologies such as e-mobility, the Internet of Things (IoT), artificial intelligence, connectivity and 5G. At the heart […]
SiC power FETs boast super-low 6-mΩ RDS(on)
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]
JEDEC publishes new test method for continuous-switching evaluation of GaN devices
JEDEC Solid State Technology Association announces the publication of JEP182: Test Method for Continuous-Switching Evaluation of Gallium Nitride Power Conversion Devices. Developed by JEDEC’s JC-70 Committee for Wide Bandgap Power Electronic Conversion Semiconductors, JEP182 is available for free download from the JEDEC website. To enable the successful adoption of GaN power transistors, both reliable operation in power […]
Automotive 40/60-V MOSFETs are AEC-Q101 qualified
The TQM Family of single and dual N-channel automotive-grade power MOSFETs are offered with drain-to-source breakdown voltage (BVDSS) of either 40 or 60 V. All of the 14 parts in this AEC-Q101 family feature a maximum operating temperature (Tj) of 175° C. And unlike many other products in this class, all are 100% tested for […]
650 V automotive GaN FETs integrate 2.2. MHz gate driver, reduce onboard charger size
Vehicle electrification is transforming the automotive industry, and consumers are increasingly demanding vehicles that can charge faster and drive farther. As a result, engineers are being challenged to design compact, lightweight automotive systems without compromising vehicle performance. Texas Instruments’ new LMG3522R030-Q1 and LMG3525R030-Q1 650-V automotive GaN FETs for automotive and industrial applications are designed to […]
n-channel MOSFET saves space, increases power density
Vishay Intertechnology, Inc. introduced a new 200 V n-channel MOSFET that offers industry-low typical on-resistance of 61 mΩ at 10 V in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, in addition to improved on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — […]
High-voltage switcher ICs now certified for automotive use
Power Integrations announced an AEC-Q100-qualified version of its LinkSwitch-TN2 switcher IC for buck or non-isolated flyback applications. Featuring an integrated 750 V MOSFET, the new automotive-qualified LinkSwitch-TN2 IC provides simple and reliable power for EV sub-systems connected to the high-voltage bus, including HVAC, climate control, battery management, battery heater, DC-DC converter and on-board charger systems. The […]
