Infineon Technologies AG announces the OptiMOS Linear FET series. This new product family combines the state-of-the-art on-state resistance (R DS(on)) of a trench MOSFET with the wide Safe Operating Area of a planar MOSFET. This solves the trade-off between R DS(on) and linear mode capability. The OptiMOS Linear FET can operate in the saturation region of an enhanced […]
Transistors
Not to be forgotten: the simple, bipolar SCRs and TRIACs
Thyristors or silicon controlled rectifiers (SCRs) and TRIACs are simple bipolar devices which probably get forgotten in this high-tech, CMOS, MOSFET, digital world. A thyristor is a PNPN bipolar device, compared to a normal bipolar transistor which will be PNP or NPN. A common way of explaining their operation is to visualize the thyristor as […]
IGBT modules rated at 150 A
Infineon Technologies AG is expanding the product portfolio of the IGBT modules with the EconoPIM™ 3 package. The current rating of the module is thereby increased from 100 A by 50 percent to 150 A. The new power modules serve the growing demand for higher power density within the same footprint. Typical applications are motor controls […]
Low-capacitance ESD diodes target high-speed interfaces in mobile devices
Toshiba America Electronic Components, Inc. (TAEC)* today announced that it has introduced a new lineup of multi-bit, low-capacitance electrostatic discharge (ESD) protection diodes for high-speed interfaces. Suitable for use in mobile devices, including smart phones, tablets, and wearable devices, the new diodes deliver excellent protection performance and support interfaces including USB 3.0/3.1 and HDMI. The new […]
TVS diode arrays optimized for DC powerlines for powered USB interfaces
Littelfuse, Inc., introduced a series of TVS Diode Arrays (SPA® Diodes) optimized to protect DC powerlines for PoweredUSB interfaces from damaging electrostatic discharges (ESDs). SP11xx Series TVS Diode Arrays employ Zener diodes fabricated in a proprietary silicon avalanche technology to protect each I/O pin in the interface. These robust devices offer high surge tolerance, […]
GaN-based inverter reference design incorporates fast current-loop software
Texas Instruments (TI) today introduced an innovative three-phase, gallium nitride (GaN)-based inverter reference design that helps engineers build 200-V, 2-kW AC servo motor drives and next-generation industrial robotics with fast current-loop control, higher efficiency, more accurate speed, and torque control. Download the reference design today. The Three-Phase High-Frequency GaN Inverter Reference Design features TI’s newest LMG3410 600-V, 12-A […]
Power management IC handles sequencing, monitoring, regulation for differing IC technologies
Silego Technology Inc. announces the introduction of SLG46580, further expanding the GreenPAK (GPAK) family of Programmable Mixed-signal Integrated Circuits (CMICs). This newest GPAK is targeted to support power systems in wearable and handheld market segments. This device is both highly integrated and highly flexible, and can provide a rich set of features, including voltage monitoring, […]
1.2-kV IGBTs go to TO-247 packages for better heat dissipation
Infineon Technologies AG expands its 1200 V discrete IGBT product portfolio by offering up to 75 A. The devices are co-packed with a full rated diode in a TO-247PLUS package. The new TO-247PLUS 3pin and 4pin packages serve the growing demand for higher power density and highest efficiency in discrete packages. Typical applications with a […]
High-temperature photocouplers target EV, HEV power module use
Toshiba America Electronic Components, Inc. (TAEC) has introduced a new range of 10 AEC Q101-qualified photocouplers designed to address the demanding isolation, interface, switching, and form factor requirements of automotive applications. Toshiba’s new range of photocouplers features a wide variety of devices – including the IC output TLX9304, TLX9378 and TLX9376 – which are housed […]
eGaN 30-V half-bridge module targets PoL apps
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs announces the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency […]
