WIN Semiconductors Corp has released an optimized version of its 0.25µm gallium nitride technology, NP25, that provides superior DC and RF transistor performance. NP25 is a 0.25µm-gate GaN-on-SiC process and offers users the flexibility to produce both fully integrated amplifier products as well as custom discrete transistors. In production since 2014, the optimized 0.25µm process […]
Transistors
Photocouplers handle 50 Mbps data rates
Toshiba America Electronic Components, Inc. (TAEC) announced two photocouplers for high-speed communications: the TLP2767 and TLP2367. The new photocouplers are housed in small, 2.3mm (max) low-height packages and meet various international safety standards, including UL1577 and EN60747-5-5. They are designed for applications such as programmable logic controllers, I/O interface boards, photovoltaic inverters, and factory automation inverters. […]
High voltage GaN application development resources available online
Transphorm Inc. announced the latest resources for high voltage GaN application development produced by its Silicon Valley Center of Excellence. The Center is responsible for educating and supporting customers developing with high-voltage (HV) wide bandgap semiconductor. Application design engineers can access tools, app notes, SPICE models and more via the Center’s Design Resources library. For questions regarding […]
Demo kits for eGaN FETs cover wireless charging standards
Efficient Power Conversion Corporation (EPC) announces the availability of two new demonstration kits – the EPC9127, a complete wireless power kit including a 10 W, class 2 amplifier, category 3 receiver device and the EPC9128, consisting of a 16 W, class 3 amplifier and two receiver devices (categories 3 and 4). These systems, coupled with […]
Servo motor first to use high-voltage (HV) GaN
Transphorm Inc. along with Yaskawa Electric Corporation announced that Yaskawa’s Σ-7 F is the first servo motor to use high-voltage (HV) GaN. Transphorm’s technology enables Yaskawa to deliver better performance in a smaller form factor versus what is possible with incumbent silicon semiconductors. The groundbreaking achievement of this co-developed device is that the Σ-7 F integrates […]
65W USB-PD (Type C) adapter reference design for GaN power ICs
Navitas Semiconductor announced what they say is the world’s smallest 65W USB-PD (Type C) adapter reference design, to keep pace with the dramatic size and weight reductions in laptop designs over the last 10 years. High-frequency, high-efficiency AllGaN Power ICs are used to deliver 65W in only 45cc / 2.7in3 and only 60g in weight by minimizing […]
28-V GaN HEMTs operate to 8 GHz with high efficiency, gain
Wolfspeed, A Cree Company has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain as well as best-in-class reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless […]
GaN-based Class-E amplifier development board operates to 15 MHz
Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces the EPC9083, a high efficiency, flexible, GaN-based differential mode development board that can operate up to 15 MHz, including 6.78 MHz which is popular […]
Metal oxide disk varistors work up to 105 °C
TDK Corporation presents leaded EPCOS metal oxide disk varistors, which have now been approved for an increased operating temperature of 105 °C (previously 85 °C). The reason for this is the recertification of the B722* series of varistors in accordance with UL 1449, 4th Edition, and IEC 61051. Raising the permissible operating temperature to 105 […]
Linear FET combines a low RDS(on) with a large SOA
Infineon Technologies AG announces the OptiMOS Linear FET series. This new product family combines the state-of-the-art on-state resistance (R DS(on)) of a trench MOSFET with the wide Safe Operating Area of a planar MOSFET. This solves the trade-off between R DS(on) and linear mode capability. The OptiMOS Linear FET can operate in the saturation region of an enhanced […]
