Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based […]
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ICs combine gate drivers with eGaN FETs for better efficiency, more compact packaging
Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of […]
100-V and 200-V GaN FET power supplies are rad-hard
The space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs from Renesas Electronics Corporation enables primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, […]
LiDAR Development Board delivers 5 nsec pulses using eGaN tech
Efficient Power Conversion Corporation (EPC) announces the availability of the EPC9126HC, a 100 V, 150 A high current pulsed laser diode driver evaluation board. In a LiDAR system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of […]
eGaN half-bridge dev board includes fast drivers
Efficient Power Conversion Corporation (EPC) announces the availability of the EPC9086 development board, a high-efficiency half-bridge development board that can operate up to 10 MHz. The EPC9086 board measures 2” x 2” and contains a 30 V, 15 A EPC2111 enhancement-mode gallium nitride half bridge in combination with the recently introduced PE29102gate driver from Peregrine Semiconductor. The purpose of this […]
GaN-based Class-E amplifier development board operates to 15 MHz
Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces the EPC9083, a high efficiency, flexible, GaN-based differential mode development board that can operate up to 15 MHz, including 6.78 MHz which is popular […]
Wireless power charging kit compatible with AirFuel Alliance class 4 spec
Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power charging kit, the EPC9120. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The purpose of this demonstration kit is to simplify the evaluation process of using eGaN FETs for highly […]
25 mΩ, 200V eGaN FET meets size and performance demands
EPC announces the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives. The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current. The chip-scale packaging of the EPC2046 handles […]
eGaN FETs now 15x smaller than silicon equivalents
Efficient Power Conversion Corp. advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ , 100 V) and the EPC2047 (10 mΩ , 200 V) eGaN FETs. Widening the performance/cost gap with equivalent silicon power transistors, the EPC2045, cuts the die size in […]
Free webinar covers GaN transistor and IC Chip-scale packaging
Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on November 3rd from 11:00 AM to 12:00 PM (EDT). GaN transistors and integrated circuits are significantly faster and smaller than their silicon ancestors. This has enabled […]
