Peer-to-peer, engineer-to-engineer questions and answers from the EDABoard.com engineering community around power electronics. Click the “Read more” link and follow the entire conversation and maybe add your two cents by logging in to EDAboard.com Voltage single-phase active front end rectifier – In OrCad 16.6, I used PI regulator and PWM, but my simulation is making errors… […]
Transistors
Automotive-qualified GaN power FETs work at higher temps than silicon counterparts
Transphorm Inc. announced that its third generation, JEDEC-qualified high voltage GaN platform has passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. This achievement marks the company’s second automotive-qualified product line. And, notably, its most reliable given the Gen III GaN platform’s ability to perform at 175°C during qualification testing. Transphorm’s Gen III […]
SiC-MOSFET gate driver delivers 8 A to handle high-kilowatt apps
Power Integrations announced the SIC1182K SCALE-iDriver, a high-efficiency, single-channel silicon carbide (SiC) MOSFET gate driver that delivers the highest peak-output gate current available without an external boost stage. Devices can be configured to support different gate-drive voltage requirements matching the range of requirements seen in SiC-MOSFETs today; key applications include UPS, photovoltaic systems, servo drives, […]
Highly integrated TLE985x motor drive IC for automotive apps
At this year’s Embedded World trade fair, Infineon Technologies AG is launching a new family of Embedded Power ICs. The TLE985x series provides highly integrated, AEC Q-100 qualified H-bridge driver motor control solutions for 2-phase DC and single-phase brushless DC motors. It will support automotive customers in replacing relays in low-end motor control applications such as sunroof […]
Smart power stage module integrates high-accuracy current, temperature monitors
The SiC645 is a smart VRPower device that integrates a high side and low side MOSFET, a high performance driver with integrated bootstrap FET. The SiC645 offers high-accuracy current and temperature monitors that can be fed back to the controller and doubler to complete a multiphase dc/dc system. They simplify design and increase performance by […]
JEDEC Wide Bandgap Power Semiconductor Committee publishes GaN power FETs document
JEDEC Solid State Technology Association announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices. The first publication developed by JEDEC’s newest main committee, JC-70 Wide Bandgap Power Electronic Conversion Semiconductors, JEP173 is available for free download from the JEDEC website. JEP173 addresses a key need of the user community […]
What’s the difference between a MOSFET and a JFET?
It’s a pretty common question for beginners and can be a fun walk down memory lane for experienced practitioners. Let’s take a dive into two fundamental devices of integrated circuits and learn when to use one over the other. How they are alike Let’s start with what they have in common: they are both types […]
AEC-qualified eGaN FETs boost performance in Lidar, 48-V automotive power systems
EPC announces successful AEC Q101 qualification of two additional eGaN devices, addressing a range of applications in the automotive industry and other harsh environments. The new products, EPC2206, and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS and 100 VDS ratings respectively. eGaN technology has been in mass production for over eight years, accumulating billions of […]
Reverse-conducting IGBT targets induction heating apps
Infineon Technologies AG is introducing the TRENCHSTOP Feature IGBT Protected Series for Induction Heating. Compared to a standard RC-H5 reverse conduction IGBT the new family integrates logic functionality and a dedicated driver IC for various programmable protection features in a single device. The Protected F Series guarantees higher system reliability with less design and programming […]
Transphorm’s ships 250K GaN FETs, shows field failure data
Transphorm Inc. disclosed that it has shipped more than 250 thousand high voltage GaN FETs. Used in customers’ mass production applications, the devices are manufactured by the company in its Aizu, Japan, wafer foundry. Transphorm also stated that its wafer-foundry’s annual installed capacity base of 15 million parts of its popular 50 mohm product equivalent […]