Magnachip Semiconductor Corporation announced that the company has released a new 40V Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) to control Brushless Direct Current (BLDC) motors for automotive applications. Given concerns about global climate change and corresponding efforts to reduce carbon emissions, the Electric Vehicle (EV) market is projected to grow significantly. Omdia, a global market research firm, […]
Transistors
Common-source dual GaN FET features 58 mΩ RDS(on), 20-A pulsed output current
EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current. The EPC2221 can be used in lidar systems for robots, surveillance systems, drones, autonomous cars, and vacuum cleaners. The low inductance and capacitance of the EPC2221 allow fast switching (100 […]
STMicroelectronics’ 50W GaN converter enables high-efficiency power designs in consumer and industrial applications
The STMicroelectronics VIPerGaN50 simplifies building single-switch flyback converters up to 50 Watts and integrates a 650V gallium-nitride (GaN) power transistor for superior energy efficiency and miniaturization. With its single-switch topology and high integration, including current-sensing and protection circuitry also built-in, the VIPerGaN50 comes in a compact and low-cost 5mm x 6mm package. The speed of the integrated […]
Chip capacitors feature 500-V ratings, handle snubber, output cap tasks
TDK Corporation has expanded its tried-and-tested range of CeraLink capacitors. Previously, only large, ready-to-fit sizes were available. Now, smaller versions with the classic chip design are included in the portfolio in order to increase the areas of application. The new portfolio starts with the EIA 2220 size, measuring 5.7 x 5 x 1.4 mm, is […]
Rad-hard GaN transistors sport super-low on resistance
EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, […]
100-V high-speed 20-MHz FET/GaN transistor driver comes in flip chip die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS High-speed FET and GaN transistor driver offering a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules, and space motor drives. The TD99102 is an integrated high-speed […]
GaN-on-SiC HEMT transistors offer broadband high linearity
Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production. The devices offer broadband high linearity features under low bias settings to […]
GaN in orbit and beyond
Outer space is harsh, but it’s relatively kind to gallium-nitride (GaN) power transistors compared with their Si (Si) counterparts. Si devices require special processing for protection against the total ionizing dose (TID) impact of exposure to radiation in space. GaN has material properties and construction advantages that make it less subject to damage caused by […]
Is Double Pulse Testing inadequate for GaN devices?
Enhancement mode (e-mode) GaN high electron mobility transistors (HEMTs) generally behave like n-channel power MOSFETs. Common curve tracers, parametric analyzers, and automatic discrete device parametric testers used for an n-channel power MOSFET can be applicable for the characterization of e-mode GaN transistors, but the implementation details differ for GaN. Typical e-mode GaN HEMTs have very […]
Better thermal management of eGaN FETs
A few simple thermal management guidelines can help conduct heat away from GaN FETs. Assaad Helou, Efficient Power Conversion Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If […]
