Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production. The devices offer broadband high linearity features under low bias settings to […]
Transistors
GaN in orbit and beyond
Outer space is harsh, but it’s relatively kind to gallium-nitride (GaN) power transistors compared with their Si (Si) counterparts. Si devices require special processing for protection against the total ionizing dose (TID) impact of exposure to radiation in space. GaN has material properties and construction advantages that make it less subject to damage caused by […]
Is Double Pulse Testing inadequate for GaN devices?
Enhancement mode (e-mode) GaN high electron mobility transistors (HEMTs) generally behave like n-channel power MOSFETs. Common curve tracers, parametric analyzers, and automatic discrete device parametric testers used for an n-channel power MOSFET can be applicable for the characterization of e-mode GaN transistors, but the implementation details differ for GaN. Typical e-mode GaN HEMTs have very […]
Better thermal management of eGaN FETs
A few simple thermal management guidelines can help conduct heat away from GaN FETs. Assaad Helou, Efficient Power Conversion Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If […]
How reliable are GaN HEMTs?
GaN HEMTs are very reliable, but the precise answer is still being refined. Reliability relates to anticipated useful life and is typically measured in mean-time-to-failure. Reliability can be anticipated and determined in advance by testing and measurement. Proving and improving device reliability is an ongoing process. It begins with a device under test (DUT) being […]
What is d-GaN, e-GaN and v-GaN power?
Gallium-nitride (GaN) power semiconductors are well-established, but compared with silicon (Si) devices, GaN is still an evolving power device technology. Most power designers have at least explored the use of GaN, whether it’s been depletion-mode (d-GaN) normally-on devices, enhancement-mode (e-GaN) normally-off devices, a cascode combination of a Si MOSFET with a d-GaN device to form […]
Dual gate drivers simplify SiC and IGBT switching circuits
Two new dual-channel galvanically-isolated gate drivers for IGBTs and silicon-carbide (SiC) MOSFETs from STMicroelectronics save space and ease circuit design in high-voltage power-conversion and industrial applications. The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on […]
Dedicated 8-inch, GaN-on-Si FET producer opens locations in US and Europe
Innoscience Technology who focuses on creating a global energy ecosystem based on high-performance, low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions, today announced the official launch of its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is now poised to support customers through the addition of design and sales support facilities in Santa Clara, […]
GaN power semis boast 120mΩ max RDS(on), at 15A max current capability
STMicroelectronics has revealed a new family of GaN power semiconductors in the STPOWER portfolio that can significantly reduce energy use and enable slimmer designs in a huge variety of electronic products. Target applications include consumer equipment such as chargers, external power adapters for PCs, LED-lighting drivers, and power supplies inside televisions and home appliances. This equipment […]
40-V, 1.3-milliohm eGaN FETs optimized for high power density apps
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. The EPC2067 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input servers. Lower gate charges and zero reverse […]